Reconfigurable field effect transistors: A technology enablers perspective

T Mikolajick, G Galderisi, S Rai, M Simon, R Böckle… - Solid-State …, 2022 - Elsevier
With classical scaling of CMOS transistors according to Dennard's scaling rules running out
of steam, new possibilities to increase the functionality of an integrated circuit at a given …

Volatile threshold switching devices for hardware security primitives: Exploiting intrinsic variability as an entropy source

W Choi, O Kwon, J Lee, S Oh, S Heo, S Ban… - Applied Physics …, 2024 - pubs.aip.org
In the age of the Internet of Things, the proliferation of edge devices has resulted in a
significant increase in personal information that is susceptible to theft and counterfeiting at …

FSM inspired unconventional Hardware Watermark using field-assisted SOT-MTJ

D Divyanshu, R Kumar, D Khan, S Amara… - IEEE …, 2023 - ieeexplore.ieee.org
The globalization of the Integrated Circuits supply chain has increased threats from
untrusted entities involved in the process. Several mechanisms, such as logic locking …

Negative capacitance FET based energy efficient and DPA attack resilient ultra-light weight block cipher design

RC Bheemana, A Japa, S sankar Yellampalli… - Microelectronics …, 2023 - Elsevier
Energy-efficient and secure cipher design for resource constrained IoT applications is a
pressing challenge with CMOS technology scaling and increased hardware attacks. This …

A robust deep learning attack immune MRAM-based physical unclonable function

MJ Adel, MH Rezayati, MH Moaiyeri, A Amirany… - Scientific Reports, 2024 - nature.com
The ubiquitous presence of electronic devices demands robust hardware security
mechanisms to safeguard sensitive information from threats. This paper presents a physical …

Negative capacitance FETs for energy efficient and hardware secure logic designs

RC Bheemana, A Japa, SS Yellampalli, R Vaddi - Microelectronics Journal, 2022 - Elsevier
Negative capacitance field effect transistors (NCFETs) have attracted good attention for
energy efficient circuit designs. However, there are no clear design insights with NCFET …

Analysis and design of novel doping free silicon nanotube TFET with high-density meshing using ML for sub nanometre technology nodes

R Kumar, BA Devi, V Sireesha, AK Reddy, I Hariharan… - Silicon, 2022 - Springer
Beyond the 25 nm technological node, MOSFETs (metal oxide semiconductor FETs) have
worse channel electrostatic control than FinFETs (Fin field-effect transistors). It is necessary …

ANV-PUF: Machine-Learning-Resilient NVM-Based Arbiter PUF

H Nassar, L Bauer, J Henkel - ACM Transactions on Embedded …, 2023 - dl.acm.org
Physical Unclonable Functions (PUFs) have been widely considered an attractive security
primitive. They use the deviations in the fabrication process to have unique responses from …

Performance analysis of doping less nanotube tunnel field effect transistor for high speed applications

S Arun Jayakar, T Rajesh, NA Vignesh, S Kanithan - Silicon, 2022 - Springer
Abstract The DL-Si-NT-TFET (doping-free tunnelling Silicon Nanotube TFET) structure is
described in this article. In metals with adequate work functions, the Si-NT-TFET …

Fault-Tolerant Reversible-Logic Based RO-PUF for Secure Device Authentication

SF Naz, AP Shah - IEEE Transactions on Circuits and Systems I …, 2024 - ieeexplore.ieee.org
Protecting data and hardware is vital, driving the adoption of Physically Unclonable
Functions (PUFs) for generating unique circuit signatures. This paper introduces a fault …