[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Substrate integrated waveguide quasi-elliptic filters with controllable electric and magnetic mixed coupling

K Gong, W Hong, Y Zhang, P Chen… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
This paper proposes a type of quasi-elliptic filter with controllable electric and magnetic
mixed coupling based on substrate integrated waveguide cavity resonators using two-layer …

A four-step method for de-embedding gigahertz on-wafer CMOS measurements

TE Kolding - IEEE transactions on electron devices, 2000 - ieeexplore.ieee.org
In this paper, a de-embedding method is proposed for conducting accurate on-wafer device
measurements in the gigahertz range. The method addresses issues of substrate coupling …

Selected topics in RF coplanar probing

SA Wartenberg - IEEE transactions on microwave theory and …, 2003 - ieeexplore.ieee.org
The RF coplanar probe is a popular tool for launching high-frequency signals onto and off of
a wafer. Physically contacting the die, it establishes a crucial link between the test system …

Design criteria in sizing phase-change RF switches

G Slovin, M Xu, R Singh, TE Schlesinger… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
This paper presents design criteria for four-terminal phase-change (PC) RF switches as a
function of their dimensions,(heater width, RF gap, and barrier thickness), materials, and …

AlN barriers for capacitance reduction in phase-change RF switches

G Slovin, M Xu, J Paramesh… - IEEE Electron …, 2016 - ieeexplore.ieee.org
We demonstrate four-terminal GeTe-based RF switches with independent thermal actuation
(switching). These devices incorporate an AlN-based dielectric separating high-conductivity …

Design and analysis of the millimeter-wave SPDT switch for TDD applications

CW Byeon, CS Park - IEEE transactions on microwave theory …, 2013 - ieeexplore.ieee.org
This paper presents a low-loss and high Tx-to-Rx isolation single-pole double-throw (SPDT)
millimeter-wave switch for true time delay applications. The switch is designed based on …

Design of low-loss transmission lines in scaled CMOS by accurate electromagnetic simulations

F Vecchi, M Repossi, W Eyssa… - IEEE Journal of Solid …, 2009 - ieeexplore.ieee.org
Transmission lines are becoming of common use at mm-wave to implement on-chip
functions as impedance matching, filtering and interconnects. Lack of an accurate and fast …

Millimeter-wave CMOS digital controlled artificial dielectric differential mode transmission lines for reconfigurable ICs

T LaRocca, SW Tam, D Huang, Q Gu… - 2008 IEEE MTT-S …, 2008 - ieeexplore.ieee.org
Digital control of the effective dielectric constant of a differential mode transmission line is
shown up to 60GHz in standard CMOS technology. The effective dielectric constant is shown …

Comparison of on-wafer multiline TRL and LRM+ calibrations for RF CMOS applications

A Rumiantsev, SL Sweeney… - 2008 72nd ARFTG …, 2008 - ieeexplore.ieee.org
This paper presents a quantitative comparison of the reference multiline TRL and LRM+ for
a customized set of standards in a CMOS process using IBM's 0.13 mum technology. This …