Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs)
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …

Silicon carbide materials are excellent candidates for high-performance applications due to
their outstanding thermomechanical properties and their strong corrosion resistance. SiC …

One of the key challenges faced by hypersonic flying is the complex thermal–mechanical–
chemical coupling effect between thermal protection materials and non-equilibrium flow …

We analyze the early stage of the highly anisotropic silicon carbide oxidation behavior with
reactive force field molecular dynamics simulations. The oxidation of a-, C,-m-, and Si …

This work presents a new thermodynamically consistent model for thermo-chemo-
mechanical processes in open systems comprised of nonlinear elastic solids that are …

Electrical properties of point defects in 4 H-SiC have been studied extensively, but those
related to carbon interstitials (C i⁠) have remained elusive until now. Indeed, when …

Silicon carbide nanowires (SiCNWs) have attracted increasing attention due to their
excellent properties and wide range of potential applications. SiCNWs covered with oxide …

Physical stress in SiO 2/SiC stacks formed by the thermal oxidation of SiC is studied
experimentally through both room temperature ex-situ and variable temperature (25–1150 …

We investigated a metal-oxide-semiconductor interface of dry-oxidized (000 1⁠) 4H-SiC,
which was known as the most electrically deteriorated SiC MOSFET, by electrically detected …

We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor
fieldeffect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet …