Status and prospects of ZnO-based resistive switching memory devices
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …
alternative than the other metal oxides for its versatility and huge applications in different …
Recent developments and perspectives for memristive devices based on metal oxide nanowires
Memristive devices are considered one of the most promising candidates to overcome
technological limitations for realizing next‐generation memories, logic applications, and …
technological limitations for realizing next‐generation memories, logic applications, and …
Dynamic evolution of conducting nanofilament in resistive switching memories
Resistive random access memory (ReRAM) has been considered the most promising next-
generation nonvolatile memory. In recent years, the switching behavior has been widely …
generation nonvolatile memory. In recent years, the switching behavior has been widely …
Fully photon modulated heterostructure for neuromorphic computing
Neuromorphic computing has attracted great attention to mimic the brain functions of
perception, learning and memory, which are considered to overcome the von Neumann …
perception, learning and memory, which are considered to overcome the von Neumann …
25th anniversary article: metal oxide particles in materials science: addressing all length scales
The fundamental mission of materials science is the description of matter over all length
scales. In this review, we apply this concept to particle research. Based on metal oxides, we …
scales. In this review, we apply this concept to particle research. Based on metal oxides, we …
Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5-Based Memristors.
CF Chang, JY Chen, CW Huang, CH Chiu… - Small (Weinheim an …, 2017 - europepmc.org
The Forming phenomenon is observed via in situ transmission electron microscopy in the
Ag/Ta2 O5/Pt system. The device is switched to a low-resistance state as the dual filament is …
Ag/Ta2 O5/Pt system. The device is switched to a low-resistance state as the dual filament is …
Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device
We demonstrate inherent biorealistic synaptic plasticity functions in the Pt/n-ZnO/SiO2–x/Pt
heterostructures, where the n-ZnO semiconductor is geometrically cone-shaped in the size …
heterostructures, where the n-ZnO semiconductor is geometrically cone-shaped in the size …
Bipolar resistive switching in junctions of gallium oxide and p-type silicon
In this work, native GaO x is positioned between bulk gallium and degenerately doped p-
type silicon (p+-Si) to form Ga/GaO x/SiO x/p+-Si junctions. These junctions show memristive …
type silicon (p+-Si) to form Ga/GaO x/SiO x/p+-Si junctions. These junctions show memristive …
In Situ Device‐Level TEM Characterization Based on Ultra‐Flexible Multilayer MoS2 Micro‐Cantilever
Current state‐of‐the‐art in situ transmission electron microscopy (TEM) characterization
technology has been capable of statically or dynamically nanorobotic manipulating …
technology has been capable of statically or dynamically nanorobotic manipulating …
Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM
CF Chang, JY Chen, GM Huang, TY Lin, KL Tai… - Nano Energy, 2018 - Elsevier
In this work, we used the polycrystalline-Fe 3 O 4 to improve the reliability of the Ag/Ta 2 O
5/Pt resistive random access memory (RRAM). In both the Ag/Ta 2 O 5/Fe 3 O 4/Pt and …
5/Pt resistive random access memory (RRAM). In both the Ag/Ta 2 O 5/Fe 3 O 4/Pt and …