Structural, electrical and optical properties of lanthanum-doped barium stannate
Abstract Ba 1− x La x SnO 3 compounds were prepared by a conventional solid-state
reaction method and their structural, electrical and optical properties were analyzed in this …
reaction method and their structural, electrical and optical properties were analyzed in this …
Preparation of high-performance metal-free UV/near infrared-shielding films for human skin protection
CH Liang, YJ Chen - Nanomaterials, 2021 - mdpi.com
A series of metal-free UV/near infrared (NIR)-shielding coatings are successfully fabricated
by shielded cathodic arc plasma evaporation (CAPE) and substrate-biased RF magnetron …
by shielded cathodic arc plasma evaporation (CAPE) and substrate-biased RF magnetron …
Structural, electrical, and optical properties of hydrogen and Cu codoped ZnO films prepared by magnetron sputtering at two substrate temperatures
BL Zhu, J Hu, M Xie, J Wu, XW Shi - Materials Today Communications, 2023 - Elsevier
Abstract The Cu-doped ZnO films were prepared by varying H 2 flux at substrate
temperature (T s) of 150 and 300° C, and their structure and electrical-optical properties …
temperature (T s) of 150 and 300° C, and their structure and electrical-optical properties …
Effects of Cu doping and deposition atmosphere on structural, electrical, optical and magnetic properties of ZnO films
BL Zhu, XM Cao, M Xie, J Wu, XW Shi - Physica B: Condensed Matter, 2023 - Elsevier
Abstract ZnO and Cu-doped ZnO (CZO) films were prepared in Ar and Ar+ H 2 atmospheres
at substrate temperature of 300° C, and their structure and opto-electromagnetic properties …
at substrate temperature of 300° C, and their structure and opto-electromagnetic properties …
[HTML][HTML] Influences of defects evolvement on the properties of sputtering deposited ZnO: Al films upon hydrogen annealing
S Yin, MM Shirolkar, J Li, M Li, X Song, X Dong… - AIP Advances, 2016 - pubs.aip.org
Understanding how the defects interact with each other and affect the properties of ZnO: Al
films is very important for improving their performance as a transparent conductive oxide …
films is very important for improving their performance as a transparent conductive oxide …
Structure, electrical and optical properties of ZnO and Cu-doped ZnO films prepared by magnetron sputtering at different H2 fluxes
B Zhu, X Cai, M Xie, X Shi - Processing and Application of Ceramics, 2024 - doiserbia.nb.rs
Zn1-xCuxO (x= 0 and 0.02) films were prepared by RF magnetron sputtering in H2-
containing atmosphere at 150° C. Their structure and optical-electrical properties as …
containing atmosphere at 150° C. Their structure and optical-electrical properties as …
Effects of growth temperature and target material on the growth behavior and electro-optical properties of ZnO: Al films deposited by high-rate steered cathodic arc …
CH Liang, WS Hwang, WL Wang - Applied Surface Science, 2015 - Elsevier
ZnO: Al (AZO) films were deposited using high-rate (215 nm/min) steered cathodic arc
plasma evaporation with a ceramic AZO target at various deposition temperatures (T d= 80 …
plasma evaporation with a ceramic AZO target at various deposition temperatures (T d= 80 …
Fabrication of oxide-based near infrared-shielding coatings for a smart window to prevent infrared-induced photoaging in human skin
CH Liang, YJ Chen - Ceramics International, 2021 - Elsevier
Oxide-based near infrared (IR)-shielding coatings consisting of quarter‐wave stacks of
oxygen-deficient tantalum oxide (Ta 2 O 5− x) and silicon oxide (SiO 2) multilayers and tin …
oxygen-deficient tantalum oxide (Ta 2 O 5− x) and silicon oxide (SiO 2) multilayers and tin …
Comparative study of structural and electro-optical properties of ZnO: Ga films grown by steered cathodic arc plasma evaporation and sputtering on plastic and their …
CH Liang, YJ Hsiao, WS Hwang - Thin Solid Films, 2016 - Elsevier
Ga-doped ZnO (GZO) films with various thicknesses (105–490 nm) were deposited on PET
substrates at a low temperature of 90° C by a steered cathodic arc plasma evaporation …
substrates at a low temperature of 90° C by a steered cathodic arc plasma evaporation …
Characteristics of amorphous indium-zinc-oxide thin-film transistors fabricated with a self-aligned coplanar structure and an NH3 plasma contact doping process
JC Park, DJ Kim, HN Lee - Science of Advanced Materials, 2016 - ingentaconnect.com
We report an NH3 plasma contact doping process for amorphous indium-zinc-oxide (a-IZO),
which we use to fabricate thin-film transistors (TFTs). By combining a self-aligned coplanar …
which we use to fabricate thin-film transistors (TFTs). By combining a self-aligned coplanar …