Simulations of Ge based optically controlled field effect transistors

A new high-performance phototransistor design based on both surface texturization and graded gate doping engineering

F Djeffal, H Ferhati - Journal of Computational electronics, 2016 - Springer
In this paper, we propose a new optically controlled field effect transistor, OC-FET, based on
both surface texturization and graded gate doping engineering. The proposed design …
被引用次数：26 相关文章 所有 5 个版本

Role of gradual gate doping engineering in improving phototransistor performance for ultra-low power applications

H Ferhati, F Djeffal - Journal of Computational Electronics, 2016 - Springer
In this paper, an optimized ultra-low power phototransistor design based on gradual gate
doping engineering is proposed. Using an analytical investigation and numerical simulation …
被引用次数：20 相关文章 所有 5 个版本