Achieving high-efficiency solar cells and at the same time driving down the cell cost has
been among the key objectives for photovoltaic researchers to attain a lower levelized cost …

Abstract We present epitaxial 1.7 eV/1.1 eV GaAs 0.75 P 0.25/Si tandem cells with an NREL-
certified efficiency of 20.0%, enabled by a thermally stable tunnel junction interconnect …

III-V compound semiconductors and SiGe alloys can be combined to develop multijunction
solar cells on Silicon substrates with optimum bandgap combinations. Current …

In the search for a hybrid III-V/Si photovoltaic technology, a tandem GaAsP/SiGe solar cell
grown on silicon substrate have been developed using SiGe/Ge reverse graded buffers …

Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on
Ge| Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom …

SiGe materials on Si substrate are promising candidates to act as the bottom cell in a
tandem structure, due to its high mobility, good process compatibility, adjustable lattice …

Lattice matched and current matched GaAsP/SiGe tandem solar cells on Si have the
potential of 40% conversion efficiency [8]. A corrected three-terminal tandem efficiency of …

With its wide bandgap and good diode performance, GaAsP is an excellent candidate for the
top cell in a silicon-based multijunction tandem device. Even though the material is not …

Abstract Low bandgap Si (1− x) Ge (x) solar cells are designed, fabricated, characterized
and analyzed for the purpose of acting as the bottom cell in a GaAsP–SiGe tandem solar …

Detailed understanding of the device electrical parameters based on the solar cell diode
model is important for the optimization of the material and device structure to achieve higher …