Analysis of temperature dependent current-voltage and frequency dependent capacitance-voltage characteristics of Au/CoO/p-Si/Al MIS diode
AR Deniz - Microelectronics Reliability, 2023 - Elsevier
In this study, the production and electrical characterization of Schottky circuit elements of
Au/CoO/p-Si/Al (MIS) structure were investigated. Diode parameters such as the ideality …
Au/CoO/p-Si/Al (MIS) structure were investigated. Diode parameters such as the ideality …
A novel selenization-free chalcopyrite CIGSSe formation in a heat-treated Cu2Se/S/Ga3Se2/S/In3Se2 multilayer thin film (ML) and ML/n-Si heterojunction …
Selenization or sulphurization is a standard method for developing copper-selenium-based
ternary to quinary compounds. The route proved effective, but there are concerns about the …
ternary to quinary compounds. The route proved effective, but there are concerns about the …
Performance of Yb/p-CIGS Schottky Photodiodes at Low Temperatures
The Yb/p-Cu (InxGa) Se2 (CIGS) Schottky photodiodes were fabricated on Mo-coated glass
substrates. Structural and morphological characterizations of the CIGS on the Mo layer were …
substrates. Structural and morphological characterizations of the CIGS on the Mo layer were …