Augmented reality (AR) and virtual reality (VR) have the potential to revolutionize the
interface between our physical and digital worlds. Recent advances in digital processing …

MicroLEDs offer an extraordinary combination of high luminance, high energy efficiency, low
cost, and long lifetime. These characteristics are highly desirable in various applications, but …

Micro light-emitting diode (micro-LED) will play an important role in the future generation of
smart displays. They are found very attractive in many applications, such as maskless …

In this study, we present a high-efficiency InGaN red micro-LED fabricated by the
incorporation of superlattice structure, atomic layer deposition passivation, and a distributed …

We demonstrate a significant quantum efficiency enhancement of InGaN red micro-light-
emitting diodes (μLEDs). The peak external quantum efficiency (EQE) of the packaged 80× …

Micro-LED has attracted tremendous attention as next-generation display, but InGaN red-
green-blue (RGB) based high-efficiency micro-LEDs, especially red InGaN micro-LED, face …

An atomically thick AlN layer is typically used as the strain compensation layer (SCL) for
InGaN-based-red light-emitting diodes (LEDs). However, its impacts beyond strain control …

Micro-light emitting diodes (µ-LEDs) suffer from a drastic drop in internal quantum efficiency
that emerges with the miniaturization of pixels down to the single micrometer size regime. In …

Micro-LEDs have been hailed as the next generation display technology due to the
advantages of high brightness, high ambient contrast ratio, and high reliability. The In x Ga 1 …

We propose a strain relaxed template (SRT), which consists of an InGaN decomposition
layer (DL) and GaN protecting layers grown at three different temperatures as …