Effect of dimensional confinement on the memristive properties of the perovskite-inspired novel CuxAgBiI4+ x halide compound

A Khalid, S Alotibi, P Ahmad, MM Hossin… - Chemical Engineering …, 2024 - Elsevier
Low dimensional halide perovskite materials have shown significant performance
enhancement in memristor devices. In search of highly stable and robust perovskites …

Flexible artificial synapses with robust bending stability based on all inorganic lead-free bismuth perovskite

F Luo, X Chen, Q Guo, Q Wang, Y Wu, X Jiao… - Applied Physics …, 2024 - pubs.aip.org
We demonstrated a flexible artificial synapse device with a structure of Al/Cs 3 Bi 2 I 9/ITO. It
is found that the device displays a resistive switching behavior, effectively simulating the …

[HTML][HTML] Flexible memristors with low-operation voltage and high bending stability based on Cu2AgBiI6 perovskite

X Chen, X Yin, Z Li, L Meng, X Han, Z Zhang… - Journal of Applied …, 2024 - pubs.aip.org
Cu 2 AgBiI 6 films were prepared by a one-step spin coating method, and flexible
memristors with an Ag/PMMA/Cu 2 AgBiI 6/ITO structure were constructed. The devices …