In the present paper, reported literature data on the grain-size dependence of resistivity of Ni
and Cu are critically evaluated by two conceptually different methods. One is the …

Grain boundaries (GBs) in metals usually increase electrical resistivity due to their distinct
atomic arrangement compared to the grain interior. While the GB structure has a crucial …

In this review, we discuss current and potential future applications for materials informatics in
industry. We include in this discussion not only the traditional materials and chemical …

The electron scattering at surfaces, interfaces, and grain boundaries is investigated using
polycrystalline and single-crystal Cu thin films and nanowires. The experimental data is …

We discuss recent progress regarding size effects and their incidence upon the coefficients
describing charge transport (resistivity, magnetoresistance, and Hall effect) induced by …

Moore's Law represents the cumulative effort by many participants to advance the
productivity of electronic systems over the last 40+ years, resulting in enormous strides in the …

The resistance of copper grain boundaries (GBs) is calculated systematically through a full
atomistic quantum approach. A set of twin GBs, including the coherent twin GB, is generated …

Interconnect resistance and reliability have emerged as critical factors limiting the
performance of advanced CMOS circuits. With the slowdown of transistor scaling …

The relative contributions of various defects to the measured resistivity in nanocrystalline Cu
were investigated, including a quantitative account of twin-boundary scattering. It has been …

Intermetallic compounds have been proposed as potential interconnect materials for
advanced semiconductor devices. This study reports the interdiffusion reliability and …