Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy

CM Brooks, L Kourkoutis, T Heeg, J Schubert… - Applied physics …, 2009 - pubs.aip.org
We report the structural properties of homoepitaxial (100) SrTiO 3 films grown by reactive
molecular-beam epitaxy (MBE). The lattice spacing and x-ray diffraction (XRD) rocking …

Defect structure of flash‐sintered strontium titanate

A Karakuscu, M Cologna, D Yarotski… - Journal of the …, 2012 - Wiley Online Library
Flash sintering of strontium titanate (SrTiO 3) is studied at different applied fields to
understand its effect on density and grain growth. In particular, the defect structure is …

Epitaxial growth, structure, and intermixing at the / interface as the film stoichiometry is varied

L Qiao, TC Droubay, T Varga, ME Bowden… - Physical Review B …, 2011 - APS
LaAlO 3 epitaxial films with La: Al cation ratios ranging from 0.9 to 1.2 were grown on TiO 2-
terminated SrTiO 3 (001) substrates by off-axis pulsed laser deposition. Although all films …

Strong oxygen pressure dependence of ferroelectricity in BaTiO3/SrRuO3/SrTiO3 epitaxial heterostructures

AP Chen, F Khatkhatay, W Zhang, C Jacob… - Journal of Applied …, 2013 - pubs.aip.org
The oxygen pressure effect on the structural and ferroelectric properties have been studied
in epitaxial BaTiO 3 (BTO)/SrRuO 3/SrTiO 3 (001) heterostructures grown by pulsed laser …

Grain‐size effects in YSZ thin‐film electrolytes

C Peters, A Weber, B Butz, D Gerthsen… - Journal of the …, 2009 - Wiley Online Library
The transport properties of oxygen‐ion conducting yttria‐stabilized zirconia (YSZ)—featuring
mean grain sizes from a few nm up to the μm regime—were studied with regard to grain …

Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO3 Thin Film Devices

C Lenser, A Koehl, I Slipukhina, H Du… - Advanced functional …, 2015 - Wiley Online Library
The resistance switching phenomenon in many transition metal oxides is described by ion
motion leading to the formation of oxygen‐deficient, highly electron‐doped filaments. In this …

Strain relaxation during in situ growth of SrTiO3 thin films

LSJ Peng, XX Xi, BH Moeckly, SP Alpay - Applied physics letters, 2003 - pubs.aip.org
We report a real-time observation of strain relaxation during in situ growth of SrTiO3 thin
films by measuring the in-plane lattice constant at the film surface using reflection high …

Nature of the resistive switching phenomena in TiO2 and SrTiO3: origin of the reversible insulator–metal transition

K Szot, G Bihlmayer, W Speier - Solid State Physics, 2014 - Elsevier
The review is devoted to the elucidation of the nature of the resistive switching (RS)
phenomena in prototypical band-insulating transition metal oxides, single crystals of TiO 2 …

A review of weak/strong links and junctions in high-Tc superconductors as a transition to a Mott insulator

J Halbritter - Superconductor Science and Technology, 2003 - iopscience.iop.org
In high-T c superconductors (HTS), which are layered, doped Mott insulators, weak links
occur easily in preparation and growth, being weakened further by irradiation, by impurities …

Nonstoichiometry accommodation in SrTiO thin films studied by positron annihilation and electron microscopy

DJ Keeble, S Wicklein, L Jin, CL Jia, W Egger… - Physical Review B …, 2013 - APS
Accommodation of nonstoichiometry in SrTiO 3 pulsed laser deposited (PLD) films was
investigated using positron annihilation lifetime spectroscopy and (scanning) transmission …