Wake up and retention in zinc magnesium oxide ferroelectric films
Zn 0.64 Mg 0.36 O (ZMO) is a newly discovered ferroelectric oxide with the wurtzite structure.
Epitaxial Zn 0.64 Mg 0.36 O films from 0.036 to 0.5 μm in thickness are grown on Pt/sapphire …
Epitaxial Zn 0.64 Mg 0.36 O films from 0.036 to 0.5 μm in thickness are grown on Pt/sapphire …
Electrical conduction processes in ZnO in a wide temperature range 20–500 K
CC Lien, CY Wu, ZQ Li, JJ Lin - Journal of Applied Physics, 2011 - pubs.aip.org
We have investigated the electrical conduction processes in as-grown and thermally cycled
ZnO single crystal as well as as-grown ZnO polycrystalline films over the wide temperature …
ZnO single crystal as well as as-grown ZnO polycrystalline films over the wide temperature …
Lithium and electrical properties of ZnO
Hydrothermal grown n-type ZnO samples have been investigated by deep level transient
spectroscopy (DLTS), thermal admittance spectroscopy (TAS), temperature dependent Hall …
spectroscopy (DLTS), thermal admittance spectroscopy (TAS), temperature dependent Hall …
Evolution of deep electronic states in ZnO during heat treatment in oxygen-and zinc-rich ambients
Hydrothermally grown ZnO samples have been annealed in Ar, Zn-rich, and O-rich ambients
and investigated by deep level transient spectroscopy (DLTS). The DLTS measurements …
and investigated by deep level transient spectroscopy (DLTS). The DLTS measurements …
Role of intrinsic and extrinsic defects in H implanted hydrothermally grown ZnO
The impact of hydrogen in ZnO is revealed by combining reaction dynamics calculations
with temperature dependent Hall (TDH), photoluminescence, and secondary ion mass …
with temperature dependent Hall (TDH), photoluminescence, and secondary ion mass …
Oxygen vacancy and EC− 1 eV electron trap in ZnO
G Chicot, P Muret, JL Santailler… - Journal of Physics D …, 2014 - iopscience.iop.org
Fourier transform deep level transient spectroscopy has been performed between 80 and
550 K in five n-type ZnO samples grown by different techniques. The capture cross section …
550 K in five n-type ZnO samples grown by different techniques. The capture cross section …
Propriétés électriques du ZnO monocristallin
S Brochen - 2012 - theses.hal.science
L'oxyde de zinc ZnO, est un semiconducteur II-VI très prometteur pour les applications en
opto-électronique dans le domaine UV, notamment pour la réalisation de dispositifs …
opto-électronique dans le domaine UV, notamment pour la réalisation de dispositifs …
Diode characteristics of ZnO/ZnMgO nanowire pn junctions grown on Si by molecular beam epitaxy
E Zielony, MA Pietrzyk - Materials Science and Engineering: B, 2021 - Elsevier
In this paper we focus on fundamental studies of ZnO/ZnMgO nanowire pn junctions grown
by MBE on Si substrate for UV light emitting sources. A lot of attention is paid on …
by MBE on Si substrate for UV light emitting sources. A lot of attention is paid on …
Optical and defect properties of hydrothermal ZnO with low lithium contamination
R Heinhold, HS Kim, F Schmidt… - Applied Physics …, 2012 - pubs.aip.org
The removal of lithium and other group I contaminants from hydrothermally grown ZnO
results in significant changes in its electrical, optical, and device characteristics. A significant …
results in significant changes in its electrical, optical, and device characteristics. A significant …
Iron related donor-like defect in zinc oxide
Hydrothermally grown ZnO samples, annealed in Zn-rich and O-rich ambients, have been
investigated by deep level transient spectroscopy. A clear correlation has been found …
investigated by deep level transient spectroscopy. A clear correlation has been found …