One of the most significant challenges for the fabrication of any microelectro-mechanical-
system (MEMS) device is the low cost and high throughput packaging of the device to …

This article describes a new wafer level capping technology for hermetic or quasi-hermetic 1
st level device sealing. The technology is based on fabrication of cap structures with bond …

This paper presents mm-wave capacitive RF-MEMS based Single-Pole-Double-Throw
(SPDT) switches fabricated in a SiGe BiCMOS process technology. Three different SiGe RF …

The introduction of radio frequency micro-electro-mechanical systems (RFMEMS) as a
monolithic option into state-of-the-art Si/SiGe BiCMOS foundry processes has paved the way …

This article presented the possibilities of making microwave and mm-wave ICs more
intelligent through a combination of established Si/SiGe BiCMOS technologies, which allow …

The K-band microelectromechanical systems (MEMS) tunable band-pass filter, with a wide-
frequency tunable range and miniature size, is able to fulfill the requirements of the …

Radio frequency microelectromechanical system (RF-MEMS) switches have demonstrated
superior electrical performance (lower loss and higher isolation) compared to semiconductor …

This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in
a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level …

ABSTRACT A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS)
Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is …

This review discusses recent developments of high-speed SiGe HBT technologies and their
application to integrated circuits with operation frequencies above 100 GHz. SiGe HBTs with …