Nonvolatile phase change random access memory (PCRAM) is regarded as one of
promising candidates for next-generation memory in the era of Big Data. The phase …

Phase change memory (PCM) is a rapidly growing technology that not only offers
advancements in storage-class memories but also enables in-memory data processing to …

Chalcogenide thin films that undergo reversible phase changes show promise for use in
next-generation nanophotonics, microelectronics, and other emerging technologies. One of …

Ge2Sb2Te5 is used in phase change memory, a nonvolatile memory technology, due to its
phase change properties. The primary advantage of phase change memory over the state-of …

Ge-Sb-Te (GST) alloys are leading phase-change materials for data storage due to the fast
phase transition between amorphous and crystalline states. Ongoing research aims at …

Doped GeSbTe (GST)-based phase change materials are of growing interest due to their
ability to enable high-temperature data retention for embedded memory applications. This …

One of the most widely used active materials for phase-change memories (PCM), the ternary
stoichiometric compound Ge 2 Sb 2 Te 5 (GST), has a low crystallization temperature of …

A textbook definition of a phase-change material (PCM) is that it releases or absorbs a
substantial amount of energy at a phase transition. The phase change of these materials is …

Understanding structure-property relationships is essential for advancing technologies
based on thin films. X-ray pair distribution function (PDF) analysis can access relevant …

Les mémoires à changement de phase (PCM) stockent l'information binaire dans la phase
d'un matériau qui peut être soit cristallin, soit amorphe. Ces deux états ayant des résistivités …