In this review, the structural, mechanical, thermal, and chemical properties of substrates
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …

Residual stress is a long-standing issue in thin film growth. Better understanding and control
of film stress would lead to enhanced performance and reduced failures. In this work, we …

Refractory transition-metal diborides (TMB 2) are candidates for extreme environments due
to melting points above 3000° C, excellent hardness, good chemical stability, and thermal …

InGaN red light emitting diode (LED) is one of the crucial bottlenecks that must be broken
through to realize high‐resolution full‐color mini/micro‐LED displays. The efficiency of …

We present a simple method for the elimination of cracks in GaN layers grown on Si (111).
Cracking of GaN on Si usually occurs due to large lattice and thermal mismatch of GaN and …

A type of single-crystal gallium nitride mesoporous membrane is fabricated and its
supercapacitor properties are demonstrated for the first time. The supercapacitors exhibit …

The effect of Si doping on the strain and microstructure in GaN films grown on sapphire by
metalorganic chemical vapor deposition was investigated. Strain was measured …

Since there is no GaN bulk single crystal available, the whole technological development of
GaN based devices relies on heteroepitaxy. Numerous defects are generated in the …

Power electronics belongs to the future key technologies in order to increase system
efficiency as well as performance in automotive and energy saving applications. Silicon is …

Two schemes of nucleation and growth of gallium nitride on Si (111) substrates are
investigated and the structural and electrical properties of the resulting films are reported …