Characterization and optimization of junctionless gate-all-around vertically stacked nanowire FETs for sub-5 nm technology nodes
VB Sreenivasulu, V Narendar - Microelectronics Journal, 2021 - Elsevier
In this paper, for the first time, we have investigated the DC, analog/RF, and linearity metrics
of asymmetric spacer junctionless (JL) Gate-All-Around (GAA) vertically stacked nanowire …
of asymmetric spacer junctionless (JL) Gate-All-Around (GAA) vertically stacked nanowire …
Performance analysis of silicon nanotube dielectric pocket Tunnel FET for reduced ambipolar conduction
This work presents a novel structure of Nanotube Tunnel FET in which a high-k dielectric
pocket is placed at the drain side to improve DC performance of the device. Using 3D TCAD …
pocket is placed at the drain side to improve DC performance of the device. Using 3D TCAD …
Electro-thermal characteristics of junctionless nanowire gate-all-around transistors using compact thermal conductivity model
N Kumar, S Kumar, PK Kaushik… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The electrothermal performance of a junctionless nanowire [JL-nanowire (NW)] gate-all-
around (GAA) transistors under self-heating effect (SHE) is examined for sub-5 nm …
around (GAA) transistors under self-heating effect (SHE) is examined for sub-5 nm …
Impact of ambient temperature and thermal resistance on device performance of junctionless silicon-nanotube FET
In this article, a comprehensive analysis of the impact of electrothermal characteristics in the
junctionless silicon-nanotube (Si-NT) field-effect-transistors is carried out using the …
junctionless silicon-nanotube (Si-NT) field-effect-transistors is carried out using the …
Impact of biomolecules position and filling area on the sensitivity of hetero stack gate MOSFET
A two-dimensional dual material double hetero stack gate (DMDG-HSG-MOSFET) based
biosensor is proposed for the identification of label-free biomolecules like uricase (K= 1.54) …
biosensor is proposed for the identification of label-free biomolecules like uricase (K= 1.54) …
A novel approach to investigate analog and digital circuit applications of silicon Junctionless-Double-Gate (JL-DG) MOSFETs
The double gate junctionless transistor (DG-JLT) has become the most promising device in
sub nano-meter regime. DGJLT based circuits have improved performance and simpler …
sub nano-meter regime. DGJLT based circuits have improved performance and simpler …
Threshold voltage modeling of Gaussian-doped Dual work function Material Cylindrical Gate-all-around (CGAA) MOSFET considering the effect of temperature and …
P Banerjee, J Das - Microelectronics Journal, 2022 - Elsevier
Current research endeavor encompasses comprehensive threshold voltage analysis of a
Gaussian-doped Dual work function Material (DM) Cylindrical Gate-all-around (CGAA) …
Gaussian-doped Dual work function Material (DM) Cylindrical Gate-all-around (CGAA) …
Subthreshold model of asymmetric GAA junctionless FETs with scaled equivalent oxide thickness
A comprehensive subthreshold model of asymmetric gate all around (GAA) junctionless (JL)
FETs with scaled equivalent oxide thickness is developed in the work. The perimeter …
FETs with scaled equivalent oxide thickness is developed in the work. The perimeter …
Modeling threshold voltage and drain-induced barrier lowering effect of opposite doping core–shell channel surrounding-gate junctionless MOSFET
L Xu, G Wu, P Li, T Cheng - Microelectronics Journal, 2023 - Elsevier
For the sake of promoting core–shell channel (CSC) junctionless (JL) MOSFET, this paper
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …
Exploring the self-heating effects & its impact on thermal noise for dielectric pocket packed double-gate-all-around (DPP-DGAA) MOSFETs
Abstract Dielectric Pocket Packed Double-Gate-All-Around (DPP-DGAA) MOSFETs are one
of the preferred choices for ULSI applications because of significantly low off-current …
of the preferred choices for ULSI applications because of significantly low off-current …