The rapid development of artificial intelligence (AI), big data analytics, cloud computing, and
Internet of Things applications expect the emerging memristor devices and their hardware …

III-V semiconductor materials are the basis of photonic devices due to their unique optical
properties. There is an increasing demand for fabricating these devices on unconventional …

Single crystal growth of ScAlMgO 4 boules with 10 mm up to 4 in.(ca 101.6 mm) in diameter
by Czochralski technique was demonstrated. Some high quality ScAlMgO 4 single crystal …

In a previous study, we successfully obtained large-diameter, low-dislocation-density GaN
wafer using the Na-flux multi-point seed (MPS) technique. However, the lattice constants of …

To produce high-quality GaN (0001) substrates with a low threading dislocation density
(TDD) and a small off-angle variation, we have developed a technique named the" maskless …

We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-
nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In …

A major obstacle limiting diamond electronics is dislocations, which deteriorate device
properties. As threading dislocations (TDs) are normally inherited from the substrate to the …

We fabricated p− n diodes under different growth pressures on free-standing GaN substrates
of the same quality and observed a noteworthy difference in the reverse leakage current. A …

Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in
radiation hardness, resulting in researchers exploring the development of GaN-based …

Gallium nitride (GaN) is a promising platform for integrated nanophotonic circuitry due to
highly versatile growth protocols for the material. With the discovery of quantum emitters …