ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …

Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …

Abstract Gallium oxide (Ga 2 O 3), a typical ultra wide bandgap semiconductor, with a
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …

We investigate the stability of self-trapped holes (STHs) and the acceptor levels of
substitutional Mg and N impurities in α-, β-, δ-, and ɛ-Ga 2 O 3 using first-principles …

Abstract Beta-Gallium oxide (β-Ga 2 O 3) has emerged as a very feasible semiconductor
material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse …

Single α-phase (Al x Ga 1− x) 2 O 3 thin films are grown on m-plane sapphire (α-Al 2 O 3)
substrates via metalorganic chemical vapor deposition. By systematically tuning the growth …

In this study, we aim to compare the changes in the luminescence properties of Ga2O3:
Cr3+ modified by Al or Sc ion substitution (chemical pressure) and hydrostatic pressure. We …

The valence and conduction band offsets at (100) β-(Al x Ga 1− x) 2 O 3/β-Ga 2 O 3
heterointerfaces with the increasing Al composition are determined via x-ray photoelectron …

This paper introduces a growth method—suboxide molecular-beam epitaxy (S-MBE)—
which enables a drastic enhancement in the growth rates of Ga2O3 and related materials to …