Thermal Induced Pr Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism
B Nie, Y Huang, Y Wang, Y Chen… - IEEE Electron …, 2023 - ieeexplore.ieee.org
To promote the practical application of ferroelectric devices, we present a systematical study
on ferroelectric properties of 10nm HZO capacitor at the high temperature application …
on ferroelectric properties of 10nm HZO capacitor at the high temperature application …
Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair
To achieve HfO2-based ferroelectric (FE) devices with robust reliabilities, the impacts of re-
annealing on 7nm FE-Hf Zr0. 5O2 (HZO) capacitors are comprehensively studied in this …
annealing on 7nm FE-Hf Zr0. 5O2 (HZO) capacitors are comprehensively studied in this …
Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO Film by Fast Ramping and Fast Cooling Process
L Zhang, G Kim, S Lee, H Shin, Y Lim… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Hafnia-based ferroelectrics (FEs) can be stabilized via careful engineering, both kinetically
and thermodynamically. Especially, the fast cooling process has been regarded as an …
and thermodynamically. Especially, the fast cooling process has been regarded as an …
Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET with IGZO Channel Utilizing Postdeposition Annealing
With high potential for back-end-of-line (BEOL) integration, HfO2-based FeFETs with
amorphous oxide semiconductor (AOS) channels have shown impressive application …
amorphous oxide semiconductor (AOS) channels have shown impressive application …
The Fluctuation Effect of Remnant Polarization in Hf0.5Zr0.5O2 Capacitors at Elevated Temperatures
Z Gao, Y Zheng, T Xin, C Liu, Q Zhao… - IEEE Electron …, 2024 - ieeexplore.ieee.org
Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based
FE devices at varying temperatures is essential for enhancing the reliability of FE memory …
FE devices at varying temperatures is essential for enhancing the reliability of FE memory …
Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks with Improved Thermal Stability (≥ 450° C)
K Zhong, F Zhang, Z Zhang, Q Zhang… - IEEE Electron …, 2024 - ieeexplore.ieee.org
In this work, for the first time, equivalent oxide thickness (EOT)-scaled FinFETs are
demonstrated based on a novel thickness-proportion controlled HfO 2-ZrO 2-HfO 2 (TPC …
demonstrated based on a novel thickness-proportion controlled HfO 2-ZrO 2-HfO 2 (TPC …
A Kinetic Pathway to Orthorhombic Hf0. 5Zr0. 5O2
To improve the crystallinity and phase composition of the Hf0. 5Zr0. 5O2 films, the effects of
annealing temperature on metal-ferroelectric-metal devices are studied by electrical …
annealing temperature on metal-ferroelectric-metal devices are studied by electrical …
Competing charge density wave phases in YNiC2
M Roman, S Di Cataldo, B Stöger, L Reisinger… - arXiv preprint arXiv …, 2024 - arxiv.org
Charge density wave (CDW) orders in YNiC2 are studied by means of combined
experimental and computational techniques. On the experimental side, single crystals grown …
experimental and computational techniques. On the experimental side, single crystals grown …
Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures
Z Gao, T Xin, C Liu, Y Xu, Y Wang… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
In this study, we investigated the reversible and irreversible polarization degradation of
hafnia-based ferroelectric capacitors (FeCAPs) using the state-of-the-art spherical …
hafnia-based ferroelectric capacitors (FeCAPs) using the state-of-the-art spherical …
Interface Engineering for Performance and Reliability Optimization of Hf0.5Zr0.5O2 FeFETs: Device Integration and Electrical Characterization
We report an integration and comprehensive study of the ozone SiO 2/HfO 2 interfacial layer
(IL) on Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric field-effect transistors (FeFETs). HZO FeFET with …
(IL) on Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric field-effect transistors (FeFETs). HZO FeFET with …