The UV LED heterostructures have been obtained by HVPE approach and investigated by
XRD, AFM and PL methods. The experiment shows that the peak wavelength of UV LEDs is …

We report on results of the performance study of UVA LEDs depending on the thickness of
the active region. UVA LEDs are based on GaN/AlGaN heterostructures grown on Al 2 O 3 …

The light-emitting diode (LED) structures based on gallium nitride (GaN) and grown on
sapphire substrates were investigated. The obtained experimental data include the emission …

We report on results of the performance study of UVA LEDs depending on the thickness of
the active region. UVA LEDs are based on GaN/AlGaN heterostructures grown on Al2O3 …

GaN/AlGaN pn heterostructures emitting in UV spectral range obtained by HVPE approach
were investigated. It was shown that the peak wavelength of UV LEDs was in the range of …

Актуальность темы исследования. Одной из важнейших задач современной науки и
техники является разработка твердотельных светоизлучающих приборов и …

The effect of superlattice adding on the luminescence properties of heterostructures based
on (Al, In, Ga) N was investigated. It is shown that using structures with two superlattices: the …

The blue light-emitting structures based on solid solutions of the system AlGaInN that
contained superlattices In 0.9 Ga 0.1 N/In 0.99 Ga 0.01 N and Al 0.15 Ga 0.85 N/GaN were …

The quantum efficiency of AlInGaN-based LED structures with different active region
thickness at different temperatures and biases was studied. The strong influence of the …

At paper, LEDs, based on the solid solution of system AlGaInN with super-lattices, were
explored. Basic parameters and characteristics were found. Solid solution compound of …