Evaluation of defects and current kinetics for aging analysis of PEDOT: PSS based supercapacitors
Abstract Poly (3, 4-ethylene-dioxythiophene) polystyrene sulfonate (PEDOT: PSS)
electrodes are readily been used as a prominent research candidate as the supercapacitor's …
electrodes are readily been used as a prominent research candidate as the supercapacitor's …
Advanced electrical characterization of AlN/Si based heterogeneous junction for photonic applications
AlN/Si based heterogeneous junction is investigated, herein, for photonic applications. A
hyperfine layer of AlN onto the n-type Silicon substrate is fabricated, and a detailed analysis …
hyperfine layer of AlN onto the n-type Silicon substrate is fabricated, and a detailed analysis …
Defect mapping of active layer of CdTe solar cells using charge deep level transient spectroscopy (Q-DLTS)
Photovoltaic solar cells based on thin-film cadmium telluride (CdTe) have emerged as a
potential contender in terms of efficiency in comparison to multi-crystalline silicon solar cell …
potential contender in terms of efficiency in comparison to multi-crystalline silicon solar cell …
Carrier removal and transport in photonic integrated circuit ready InGaAsP/InP substrate: Electrical and transients of charges evaluation
InGaAsP based technologies are more favorable due to its unique monolithic integrated
nature. For an efficient electro-optical device structure, there is a keen interest to develop …
nature. For an efficient electro-optical device structure, there is a keen interest to develop …
Effect of annealing dynamics on the ion-engineered CdTe/ZnTe solar cells
Abstract Cd 1− x Zn x Te (CZT)-based matrices have highest absorption capabilities and
tunable band gap, so it can be utilized as the central most significant photon absorption …
tunable band gap, so it can be utilized as the central most significant photon absorption …
Investigation of Leakage Parameters of Hafnium Silicate (HfSiO4) Based Nano-Scale MOS Circuits
J Ahmad - 2020 - search.proquest.com
Abstract High-k based Metal Oxide Semiconductor (MOS) capacitors are readily used in next
generation nano scaled Complementary Metal Oxide Semiconductor (CMOS) circuits. These …
generation nano scaled Complementary Metal Oxide Semiconductor (CMOS) circuits. These …