Resistive random‐access memory (RRAM) is a promising candidate for next‐generation
nonvolatile random‐access memory protocols. The information storage in RRAM is realized …

In the quest for high-density integration and massive scalability, ferroelectric-based devices
provide an achievable approach for nonvolatile crossbar array (CBA) architecture and …

With the development of electronic information technology, the miniaturization of lightweight
devices and their integration have increased the requirements for materials, and two …

BiFeO 3/ZnO⁠, ZnO/BiFeO 3⁠, BiFeO 3/ZnO/BiFeO 3⁠, and ZnO/BiFeO 3/ZnO thin film
heterostructures were deposited on SrRuO 3/Pt (111)/TiO 2/SiO 2/Si (100) substrates by off …

Multiferroic BiFeO 3 thin film was grown on the ZnO-buffered Pt/TiO 2/SiO 2/Si (100)
substrate by off-axis radio frequency magnetron sputtering, where the ZnO buffer layer gave …

This work reports the impact of ZnO layer thickness on optical and resistive switching
behavior of BaTiO 3/ZnO heterostructures grown by pulsed laser deposition. The interface …

We have prepared BaTiO 3 thin films by metal–organic decomposition, focusing on the
effects of a final annealing in oxygen. In particular, we investigated the relation between the …

We present a dielectric continuum model approach for studying the electrical polarization
properties of interface polarization coupled BaTiO 3, BaTiO 3-ZnO, and ZnO-BaTiO 3-ZnO …

Plasma spraying technique enables to create layers with thickness in a millimeter range
adhering to various substrates. The supersonic plasma spraying can spray the powders at …

Herein, we develop a ferroelectric/semiconducting heterostructure for deep UV-Vis photo
detection as a new approach to enhance the photocurrent by introducing the polarization …