High-κ dielectric materials for microelectronics
RM Wallace, GD Wilk - Critical reviews in solid state and materials …, 2003 - Taylor & Francis
High-κ Dielectric Materials for Microelectronics Page 1 Critical Reviews in Solid State and
Materials Sciences, 28:231–285, 2003 Copyright C Taylor and Francis Inc. ISSN: 1040-8436 …
Materials Sciences, 28:231–285, 2003 Copyright C Taylor and Francis Inc. ISSN: 1040-8436 …
Atomic layer deposition of molybdenum nitride thin films for Cu metallizations
P Alén, M Ritala, K Arstila, J Keinonen… - Journal of The …, 2005 - iopscience.iop.org
Molybdenum nitride thin films were deposited by the atomic layer deposition technique
within a temperature range of 350-500 C from molybdenum pentachloride and ammonia …
within a temperature range of 350-500 C from molybdenum pentachloride and ammonia …
Thermal stability of on Si
The kinetics of the interfacial layer (IL) growth between Hf aluminates and the Si substrate
during high-temperature rapid thermal annealing (RTA) in either N 2 (∼ 10 Torr) or high …
during high-temperature rapid thermal annealing (RTA) in either N 2 (∼ 10 Torr) or high …
Atomic layer deposition of TaN and Ta3N5 using pentakis (dimethylamino) tantalum and either ammonia or monomethylhydrazine
Z Fang, HC Aspinall, R Odedra, RJ Potter - Journal of crystal growth, 2011 - Elsevier
TaNx thin films were grown at temperatures ranging from 200 to 375° C using atomic layer
deposition (ALD). Pentakis (dimethylamino) tantalum (PDMAT) was used as a tantalum …
deposition (ALD). Pentakis (dimethylamino) tantalum (PDMAT) was used as a tantalum …
Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing
RE Nieh, CS Kang, HJ Cho, K Onishi… - … on electron devices, 2003 - ieeexplore.ieee.org
The electrical, material, and reliability characteristics of zirconium oxynitride (Zr-oxynitride)
gate dielectrics were evaluated. The nitrogen (/spl sim/1.7%) in Zr-oxynitride was primarily …
gate dielectrics were evaluated. The nitrogen (/spl sim/1.7%) in Zr-oxynitride was primarily …
High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by post-deposition anneal
Electrical and chemical characteristics of metal-oxide semiconductor field-effect transistors
(MOSFETs) prepared by low-thermal-budget (∼ 600° C) NH 3 post-deposition annealing of …
(MOSFETs) prepared by low-thermal-budget (∼ 600° C) NH 3 post-deposition annealing of …
Characteristics of atomic-layer-deposited thin HfxZr1− xO2 gate dielectrics
DH Triyoso, RI Hegde, JK Schaeffer… - Journal of Vacuum …, 2007 - pubs.aip.org
In this study, the authors investigated the addition of zirconium (Zr) into Hf O 2 to improve its
dielectric properties. Hf x Zr 1− x O 2 films were deposited by atomic-layer deposition at 200 …
dielectric properties. Hf x Zr 1− x O 2 films were deposited by atomic-layer deposition at 200 …
Physical and electrical characteristics of high-κ gate dielectric Hf (1− x) LaxOy
The physical and electrical characteristics of high-κ gate dielectric Hf (1− x) LaxOy were
systematically investigated in this work. Cross-sectional transmission electron microscopy …
systematically investigated in this work. Cross-sectional transmission electron microscopy …
Challenges for the characterization and integration of high-κ dielectrics
RM Wallace - Applied surface science, 2004 - Elsevier
The integration of advanced gate dielectric materials into complementary metal-oxide-
semiconductor (CMOS) technology presents several significant challenges. Moreover, the …
semiconductor (CMOS) technology presents several significant challenges. Moreover, the …
Investigation of Cody–Lorentz and Tauc–Lorentz Models in Characterizing Dielectric Function of (HfO2) x (ZrO2)1–x Mixed Thin Film
H Shahrokhabadi, A Bananej, M Vaezzadeh - Journal of Applied …, 2017 - Springer
In the present study, Tauc–Lorentz and Urbach tail assisted Cody–Lorentz models were
intuitively derived, explained, and employed to simulate the imaginary dielectric function of …
intuitively derived, explained, and employed to simulate the imaginary dielectric function of …