Next-generation mid-infrared sources
The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …
applications in molecular sensing, security and defense, energy conservation, and …
Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
Recent advances in mid-infrared (3–6 μm) emitters
We describe the metal-organic chemical vapor deposition (MOCVD) of InAsSb/InAs multiple
quantum well (MQW) and InAsSb/InAsP strained-layer superlattice (SLS) active regions for …
quantum well (MQW) and InAsSb/InAsP strained-layer superlattice (SLS) active regions for …
InAsSb-based photodetectors
EH Steenbergen - Mid-infrared Optoelectronics, 2020 - Elsevier
InAs 1–x Sb x has the smallest bandgap of conventional III-V ternary alloys and thus has
been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …
been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …
Strain-balanced InAs/InAs1− xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates
EH Steenbergen, K Nunna, L Ouyang… - Journal of Vacuum …, 2012 - pubs.aip.org
Strain-balanced InAs/InAs 1− x Sb x type-II superlattices (SLs) on GaSb substrates with
0.27≤ x≤ 0.33 were grown by molecular beam epitaxy and demonstrated …
0.27≤ x≤ 0.33 were grown by molecular beam epitaxy and demonstrated …
Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ= 4.2 μm with AlSb barriers for improved carrier confinement
MJ Pullin, HR Hardaway, JD Heber, CC Phillips… - Applied Physics …, 1999 - pubs.aip.org
Room-temperature InAs/InAs1xSbx strained-layer superlattice light-emitting diodes (x 8%)
are reported that emit at 4.2 m with an internal efficiency of 2.8%. The structures are grown …
are reported that emit at 4.2 m with an internal efficiency of 2.8%. The structures are grown …
Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications
D Lackner, OJ Pitts, S Najmi, P Sandhu… - Journal of crystal …, 2009 - Elsevier
We report the OMVPE growth and characterization of InAsSb/InAs strain balanced multiple
quantum wells lattice-matched to GaSb substrates for potential application as mid-infrared …
quantum wells lattice-matched to GaSb substrates for potential application as mid-infrared …
Structural and optical characterization of type-II InAs/InAs1− xSbx superlattices grown by metalorganic chemical vapor deposition
EH Steenbergen, Y Huang, JH Ryou, L Ouyang… - Applied Physics …, 2011 - pubs.aip.org
Strain-balanced type-II InAs/InAs 1–x Sb x superlattices with various compositions (x= 0.22,
0.23, 0.37) and different layer thicknesses (t InAs= 7 nm, t InAsSb= 3.3, 2.3, 2.0 nm …
0.23, 0.37) and different layer thicknesses (t InAs= 7 nm, t InAsSb= 3.3, 2.3, 2.0 nm …
Mid-Infrared 2—5 μm Heterojunction Laser Diodes
Abstract High performance mid-infrared (2–5 μm) laser diodes are needed for applications
such as high resolution and high sensitivity chemical gas analysis and atmospheric pollution …
such as high resolution and high sensitivity chemical gas analysis and atmospheric pollution …
Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm
A Wilk, M El Gazouli, M El Skouri, P Christol… - Applied Physics …, 2000 - pubs.aip.org
Mid-infrared laser diodes with compressively strained InAsSb/InAs type-II slightly coupled
quantum wells are reported. These lasers, grown on InAs by molecular-beam epitaxy, have …
quantum wells are reported. These lasers, grown on InAs by molecular-beam epitaxy, have …