Fabrication of ᵞ-In₂Se₃-Based Photodetector Using RF Magnetron Sputtering and Investigations of Its Temperature-Dependent Properties
Metal chalcogenide indium selenide (In2Se3) is attracting increasing research interest for
photodetector applications due to its excellent photoresponse and superior stability under …
photodetector applications due to its excellent photoresponse and superior stability under …
Ultrasensitive, Highly Repeatable, Ultrafast MoO3/P-Si Heterostructure-Based Photodetector
B Sharmila, P Dwivedi - IEEE Sensors Journal, 2022 - ieeexplore.ieee.org
This article presents the development of an ultrasensitive molybdenum trioxide/porous
silicon (MoO3/P-Si) heterostructure-based photodetector. Process scalability, high speed …
silicon (MoO3/P-Si) heterostructure-based photodetector. Process scalability, high speed …
Transition in the preferred orientation of RF sputtered ZnO/Si thin films by thermal annealing: Structural, morphological, and optical characteristics
Polycrystalline ZnO thin films having preferential growth along the polar (002) plane are
prepared on Si (111) substrate using RF sputtering technique. A gradual build-up of the …
prepared on Si (111) substrate using RF sputtering technique. A gradual build-up of the …
Tunable broadband absorption in continuous and porous textured Si/C bilayers: A comparative study
Effective light scattering, transmission and absorption play a pivotal role in optical devices.
Significant progress has been recorded in this area via the application of surface texturing …
Significant progress has been recorded in this area via the application of surface texturing …
Amorphous to Polycrystalline Phase Transition of In Situ Annealed Ge Films: Structural, Morphological, Optical, and Electrical Characteristics
G Singh, D Gupta, S Aggarwal - ChemistrySelect, 2024 - Wiley Online Library
Radio Frequency (RF) sputtered germanium (Ge) thin films were deposited on glass
substrate at in situ annealing temperatures of 400, 450, 500, 550, and 600° C. X‐ray …
substrate at in situ annealing temperatures of 400, 450, 500, 550, and 600° C. X‐ray …
Al0.5Zn0.5O:In-based Photodetectors: Metal-Semiconductor-Metal and Heterojunction for Deep-UV Sensing
HY Liu, YJ Liu, ZY Huang - IEEE Sensors Journal, 2023 - ieeexplore.ieee.org
This study investigates deep-ultraviolet rad-iation detection using photodetectors (PDs)
based on indium-doped Al Zn (Al Zn: In), including metal–semiconductor–metal …
based on indium-doped Al Zn (Al Zn: In), including metal–semiconductor–metal …
High‐Performance UV–Vis–NIR Photodetectors Based on PEDOT Obtained by Plasma‐Enhanced Chemical Vapor Deposition
This study presents the fabrication of organic UV–vis–NIR photodetectors based on poly (3,
4‐ethylenedioxythiophene)(PEDOT) thin films synthesized via a plasma‐enhanced …
4‐ethylenedioxythiophene)(PEDOT) thin films synthesized via a plasma‐enhanced …
[PDF][PDF] NANOSCALE PHASE SEPARATION AND TRANSFORMATIONS IN THE SILICON-OXYGEN AND RELATED SYSTEMS
P AGGREY - 2023 - skoltech.ru
The development of nanostructured silicon-based materials from siliceous precursors could
address many challenges faced by their bulk counterparts, placing this area of research at …
address many challenges faced by their bulk counterparts, placing this area of research at …