Power semiconductor devices are key to delivering high-efficiency energy conversion in
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …

Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …

Avalanche and surge robustness involve fundamental carrier dynamics under high electric
field and current density. They are also prerequisites of any power device to survive …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

Envisaging headway in the applicability of sustainable H 2 energy, the novel report of the
fabrication of MoS 2-BN/TiO 2 (MBT) heterogeneous nanostructures has been proposed via …

ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …

There is an emerging need for high-sensitivity solar-blind deep ultraviolet (DUV)
photodetectors with an ultra-fast response speed. Although nanoscale devices based on Ga …

Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …