Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
AI/ML algorithms and applications in VLSI design and technology
An evident challenge ahead for the integrated circuit (IC) industry is the investigation and
development of methods to reduce the design complexity ensuing from growing process …
development of methods to reduce the design complexity ensuing from growing process …
Multilevel operation of ferroelectric fet memory arrays considering current percolation paths impacting switching behavior
This letter reports multi-level-cell (MLC) operation of ferroelectric FETs (FeFET) arranged in
AND-connected memory arrays with a bit-error rate (BER) of 4% when writing a random data …
AND-connected memory arrays with a bit-error rate (BER) of 4% when writing a random data …
Machine learning-assisted statistical variation analysis of ferroelectric transistor: From experimental metrology to adaptive modeling
A novel machine learning (ML)-assisted approach is proposed for investigating the
variability of ferroelectric field-effect transistor (FeFET) to shorten the loop of technology …
variability of ferroelectric field-effect transistor (FeFET) to shorten the loop of technology …
Machine Learning-Assisted Compact Modeling of W-Doped Indium Oxide Channel Transistor for Back-End-of-Line Applications
Machine learning (ML)-assisted compact modeling framework is proposed for design-
technology co-optimization (DTCO) of W-doped indium oxide (IWO) channel transistor. The …
technology co-optimization (DTCO) of W-doped indium oxide (IWO) channel transistor. The …
FeFET Reliability Modeling for In-Memory Computing: Challenges, Perspective, and Emerging Trends
Ferroelectric FET (FeFET) is a singularly attractive emerging technology with a rich feature
set. Boasting high versatility, it has already been implemented in a host of applications, like …
set. Boasting high versatility, it has already been implemented in a host of applications, like …
ML-TCAD: Accelerating FeFET Reliability Analysis Using Machine Learning
Physics-based simulations using technology computer aided design (TCAD) offer high
accuracy while suffering from exceedingly slow computations and significant license costs …
accuracy while suffering from exceedingly slow computations and significant license costs …
Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks
X Tang, Z Li, L Zeng, H Zhou… - IEEE Journal of the …, 2024 - ieeexplore.ieee.org
Engineers used TCAD tools for semiconductor devices modeling. However, it is
computationally expensive and time-consuming for advanced devices with smaller …
computationally expensive and time-consuming for advanced devices with smaller …
Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf0.5Zr0.5O2 Utilizing Schottky Emission Current in Switchable Diode
K Lee, SH Oh, H Jang, S Lee, BJ Lee… - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
In this work, we proposed a novel variability analysis method in nanoscale ferroelectric (FE)
Hf Zr O2 (HZO) using FE diode. The polarization variability was indirectly evaluated from the …
Hf Zr O2 (HZO) using FE diode. The polarization variability was indirectly evaluated from the …
ML-TCAD: Perspectives and Challenges on Accelerating Transistor Modeling using ML
R Novkin, S Thomann… - 2023 ACM/IEEE 5th …, 2023 - ieeexplore.ieee.org
Technology CAD (TCAD) demonstrates great capabilities in solving complex problems and
remains an essential tool for transistor modeling. Despite its high accuracy, realized through …
remains an essential tool for transistor modeling. Despite its high accuracy, realized through …