Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

A Rai, HCP Movva, A Roy, D Taneja, S Chowdhury… - Crystals, 2018 - mdpi.com
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …

CVD technology for 2-D materials

PC Shen, Y Lin, H Wang, JH Park… - … on Electron Devices, 2018 - ieeexplore.ieee.org
The urgently growing demand for lowering the power consumption and increasing the
performance in electronic and optoelectronic systems has been driving the scientific …

Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Q Gao, Z Zhang, X Xu, J Song, X Li, Y Wu - Nature communications, 2018 - nature.com
Atomically-thin layered molybdenum disulfide (MoS2) has attracted tremendous research
attention for their potential applications in high performance DC and radio frequency …

Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices

KM Price, S Najmaei, CE Ekuma… - ACS Applied Nano …, 2019 - ACS Publications
As two-dimensional (2D) electronic devices continue to advance, the need for integrating
high-quality, high-κ nanoscale dielectrics becomes more essential. Plasma-enhanced …

Adjustment methods of Schottky barrier height in one-and two-dimensional semiconductor devices

J Meng, C Lee, Z Li - Science Bulletin, 2024 - Elsevier
The Schottky contact which is a crucial interface between semiconductors and metals is
becoming increasingly significant in nano-semiconductor devices. A Schottky barrier, also …

Devices and defects in two-dimensional materials: outlook and perspectives

A Rai, A Roy, A Valsaraj, S Chowdhury… - Defects in Two …, 2022 - Elsevier
The goal of this chapter is to provide an overview of two-dimensional (2D) materials and
highlight some of the latest and promising advances in 2D material-based devices along …

Phase-Engineered Field-Effect Transistors Based on Two-Dimensional Transition Metal Dichalcogenides

R Ma - 2020 - search.proquest.com
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are layered
materials in which each unit consists of a transition metal (Mo, and W) layer sandwiched …

[引用][C] Chế tạo vật liệu nano MoS2 và thử nghiệm ứng dụng phân hủy chất màu hữu cơ

TN Nguyễn - 2023 - Trường Đại học Hoa Lư