Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Interfacial chemistry of oxides on InxGa (1− x) As and implications for MOSFET applications
The prospect of enhanced device performance from III–V materials has been recognized for
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
G He, X Chen, Z Sun - Surface Science Reports, 2013 - Elsevier
Recently, III–V materials have been extensively studied as potential candidates for post-Si
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
A Distributed Model for Border Traps in MOS Devices
A distributed border trap model based on tunneling between the semiconductor surface and
trap states in the gate dielectric film is formulated to account for the observed frequency …
trap states in the gate dielectric film is formulated to account for the observed frequency …
Ultimate scaling of CMOS logic devices with Ge and III–V materials
M Heyns, W Tsai - Mrs bulletin, 2009 - cambridge.org
Over the years, many new materials have been introduced in advanced complementary
metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the …
metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the …
A Distributed Bulk-Oxide Trap Model for InGaAs MOS Devices
Y Yuan, B Yu, J Ahn, PC McIntyre… - … on Electron Devices, 2012 - ieeexplore.ieee.org
This paper presents a distributed circuit model for bulk-oxide traps based on tunneling
between the semiconductor surface and trap states in the gate dielectric film. The model is …
between the semiconductor surface and trap states in the gate dielectric film. The model is …
A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0 …
In this work, we present the results of an investigation into the effectiveness of varying
ammonium sulphide (NH 4) 2 S concentrations in the passivation of n-type and p-type In …
ammonium sulphide (NH 4) 2 S concentrations in the passivation of n-type and p-type In …
Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- Dielectrics
Atomic layer deposition (ALD) provides a unique opportunity to integrate high-quality gate
dielectrics on III-V compound semiconductors. The physics and chemistry of a III-V …
dielectrics on III-V compound semiconductors. The physics and chemistry of a III-V …
Atomic layer deposition of dielectrics on Ge and III–V materials for ultrahigh performance transistors
The prospect of utilizing alternative transistor channel materials for ultrahigh performance
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
Border traps in Ge/III–V channel devices: Analysis and reliability aspects
The aim of this review paper is to describe the impact of so-called border traps (BTs) in high-
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …