The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research
due to their potential in next-generation electronics. While offering many unique properties …

Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …

III–V semiconductors, such as InAs, with an ultrathin high-κ oxide layer have attracted a lot of
interests in recent years as potential next-generation metal–oxide–semiconductor field-effect …

Abstract Ferroelectric HfxZr1–xO2 (HZO) is typically achieved by crystallization of an
amorphous thin film via rapid thermal processing (RTP) at time scales of seconds to minutes …

Understanding the reaction mechanisms involved during the early stage of atomic layer
deposition (ALD) of HfO 2 on InAs is a key requirement for improving interfaces in III-V …

Atomic layer deposition (ALD) is one of the backbones for today's electronic device
fabrication. A critical property of ALD is the layer-by-layer growth, which gives rise to the …

Candidate systems for topologically-protected qubits include two-dimensional electron
gases (2DEGs) based on heterostructures exhibiting a strong spin–orbit interaction and …

The two-dimensional electron gas (2DEG) that forms on a semiconductor surface can be
used to explore a variety of phenomena in quantum physics and plays an important role in …

Hybrid systems consisting of highly transparent channels of low-dimensional
semiconductors between superconducting elements allow the formation of quantum …

Polycrystalline InAs films were prepared on GaSb substrates using direct current (DC)
magnetron sputtering. The effects of different substrate temperatures, sputtering power …