Emerging opportunities for 2D semiconductor/ferroelectric transistor‐structure devices
Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which
revolutionary innovations are needed to address fundamental limitations on material and …
revolutionary innovations are needed to address fundamental limitations on material and …
Organic field‐effect transistor for energy‐related applications: low‐power‐consumption devices, near‐infrared phototransistors, and organic thermoelectric devices
X Ren, F Yang, X Gao, S Cheng… - Advanced Energy …, 2018 - Wiley Online Library
The organic field‐effect transistor (OFET) is the basic building block of integrated circuits.
The charge carrier mobility and operating frequency of OFETs have continued to increase; …
The charge carrier mobility and operating frequency of OFETs have continued to increase; …
Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
Power dissipation is a fundamental issue for future chip-based electronics. As promising
channel materials, two-dimensional semiconductors show excellent capabilities of scaling …
channel materials, two-dimensional semiconductors show excellent capabilities of scaling …
A review of sharp-switching devices for ultra-low power applications
S Cristoloveanu, J Wan… - IEEE Journal of the …, 2016 - ieeexplore.ieee.org
The reduction of the supply voltage is standard MOSFETs is impeded by the subthreshold
slope, which cannot be lowered below 60 mV/decade, even in ideal fully-depleted devices …
slope, which cannot be lowered below 60 mV/decade, even in ideal fully-depleted devices …
Nonlinear couplings and energy transfers in micro-and nano-mechanical resonators: intermodal coupling, internal resonance and synchronization
Extensive development of micro/nano-electromechanical systems (MEMS/NEMS) has
resulted in technologies that exhibit excellent performance over a wide range of applications …
resulted in technologies that exhibit excellent performance over a wide range of applications …
Graphene strain-effect transistor with colossal on/off current ratio enabled by reversible nanocrack formation in metal electrodes on piezoelectric substrates
Extraordinarily high carrier mobility in graphene has led to many remarkable discoveries in
physics and at the same time invoked great interest in graphene-based electronic devices …
physics and at the same time invoked great interest in graphene-based electronic devices …
Mode coupling in electromechanical systems: Recent advances and applications
ML Guo, JW Fang, JF Chen, BL Li… - Advanced Electronic …, 2023 - Wiley Online Library
Mode interactions have recently become the focus of intense research in micro/
nanoelectromechanical systems (M/NEMS) due to their ability to improve device …
nanoelectromechanical systems (M/NEMS) due to their ability to improve device …
Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates
The direct growth of graphene on insulating substrate is highly desirable for the commercial
scale integration of graphene due to the potential lower cost and better process control. We …
scale integration of graphene due to the potential lower cost and better process control. We …
An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed
Landau field effect transistors promise to lower the power-dissipation of integrated circuits
(ICs) by reducing the subthreshold swing (S) below the Boltzmann limit of 60 mV/dec. The …
(ICs) by reducing the subthreshold swing (S) below the Boltzmann limit of 60 mV/dec. The …
Anisotropy of impact ionization in WSe2 field effect transistors
Carrier multiplication via impact ionization in two-dimensional (2D) layered materials is a
very promising process for manufacturing high-performance devices because the …
very promising process for manufacturing high-performance devices because the …