Design and optimization of gate driver integrated multichip 3-D GaN power module
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are excellent power
semiconductor devices due to their superior material properties compared to their silicon (Si) …
semiconductor devices due to their superior material properties compared to their silicon (Si) …
Design and optimization of 650V/60A double-sided cooled multichip GaN module
Wide bandgap (WBG) semiconductors have become the ultimate choice for future high-
performance power electronics energy conversion due to their superior material properties …
performance power electronics energy conversion due to their superior material properties …
A 650V/60A gate driver integrated wire-bondless multichip GaN module
Lateral Gallium Nitride (GaN) high electron mobility transistors (HEMT) exhibit lower on
resistance and high switching speed due to the presence of 2D electron Gas and smaller …
resistance and high switching speed due to the presence of 2D electron Gas and smaller …
Direct copper bonding for power interconnects: Design, manufacturing, and test
3-D power module structures allow for better cooling and lower parasitic inductances
compared with the classical planar technology. In this paper, we present a 3-D technology …
compared with the classical planar technology. In this paper, we present a 3-D technology …
Multidevice Dual Active Half Bridge DC-DC Converter with Zero-Input-Current-Ripple for EV Onboard Chargers Application
In this paper, a dual active half-bridge DC-DC converter (DAHB) with zero-input current
ripple is presented. To enhance the quality of the current and overall power output from the …
ripple is presented. To enhance the quality of the current and overall power output from the …
Electrical characterization of a pressed contact between a power chip and a metal electrode
This study deals with the power electronics packaging and the needs for additional
knowledge about electrical pressed contact behavior. For this, a measure bench has been …
knowledge about electrical pressed contact behavior. For this, a measure bench has been …
Assemblages de puissance innovants haute température-haute tension pour composants Si dédiés aux applications embarquées aéronautiques, automobiles et …
M Barrière - 2017 - theses.hal.science
L'électronique de puissance est un domaine en mutation. Les environnements et les
conditions de fonctionnement des modules de puissance sont de plus en plus sévères …
conditions de fonctionnement des modules de puissance sont de plus en plus sévères …
Reduction of the stray inductance in a switching cell using the power chip-on-chip 3D integration concept
JL Marchesini, Y Avenas, PO Jeannin… - 2012 IEEE Energy …, 2012 - ieeexplore.ieee.org
With the emergence of new power semiconductor devices, the switching speeds are
increasing. The stray inductance of switching cells must be minimised to limit the over …
increasing. The stray inductance of switching cells must be minimised to limit the over …
Conception et hybridation de l'environnement électronique des composants de puissance à structure verticale
T Simonot - 2011 - theses.hal.science
Ces travaux de thèse portent sur l'intégration hétérogène des fonctions de commande pour
des transistors de puissance verticaux à grille isolée. Ce travail a consisté en la conception …
des transistors de puissance verticaux à grille isolée. Ce travail a consisté en la conception …
Etude et caractérisation d'une nouvelle connectique adaptée à l'intégration tridimensionnelle pour l'électronique de puissance
VH Nguyen - 2010 - theses.fr
Résumé L'intégration tridimensionnelle est une voie prometteuse permettant d'améliorer
simultanément des performances électriques (réduction des inductances et résistances …
simultanément des performances électriques (réduction des inductances et résistances …