Graphene and two-dimensional materials for silicon technology

D Akinwande, C Huyghebaert, CH Wang, MI Serna… - Nature, 2019 - nature.com
The development of silicon semiconductor technology has produced breakthroughs in
electronics—from the microprocessor in the late 1960s to early 1970s, to automation …

Ferroelectrics-integrated two-dimensional devices toward next-generation electronics

T Jin, J Mao, J Gao, C Han, KP Loh, ATS Wee… - ACS nano, 2022 - ACS Publications
Ferroelectric materials play an important role in a wide spectrum of semiconductor
technologies and device applications. Two-dimensional (2D) van der Waals (vdW) …

Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

KH Kim, S Oh, MMA Fiagbenu, J Zheng… - Nature …, 2023 - nature.com
Three-dimensional monolithic integration of memory devices with logic transistors is a
frontier challenge in computer hardware. This integration is essential for augmenting …

The road for 2D semiconductors in the silicon age

S Wang, X Liu, P Zhou - Advanced Materials, 2022 - Wiley Online Library
Continued reduction in transistor size can improve the performance of silicon integrated
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …

Two-dimensional transition metal dichalcogenides: interface and defect engineering

Z Hu, Z Wu, C Han, J He, Z Ni, W Chen - Chemical Society Reviews, 2018 - pubs.rsc.org
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as
promising candidates for next generation nanoelectronics. Because of their atomically-thin …

Impact of planar and vertical organic field‐effect transistors on flexible electronics

A Nawaz, L Merces, LMM Ferro, P Sonar… - Advanced …, 2023 - Wiley Online Library
The development of flexible and conformable devices, whose performance can be
maintained while being continuously deformed, provides a significant step toward the …

[HTML][HTML] Ferroelectric field effect transistors: Progress and perspective

JY Kim, MJ Choi, HW Jang - APL Materials, 2021 - pubs.aip.org
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …

Emerging 2D memory devices for in‐memory computing

L Yin, R Cheng, Y Wen, C Liu, J He - Advanced Materials, 2021 - Wiley Online Library
It is predicted that the conventional von Neumann computing architecture cannot meet the
demands of future data‐intensive computing applications due to the bottleneck between the …

Artificial optoelectronic synapses based on ferroelectric field-effect enabled 2D transition metal dichalcogenide memristive transistors

ZD Luo, X Xia, MM Yang, NR Wilson, A Gruverman… - ACS …, 2019 - ACS Publications
Neuromorphic visual sensory and memory systems, which can perceive, process, and
memorize optical information, represent core technology for artificial intelligence and …

Doping engineering and functionalization of two-dimensional metal chalcogenides

P Luo, F Zhuge, Q Zhang, Y Chen, L Lv, Y Huang… - Nanoscale …, 2019 - pubs.rsc.org
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use
in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the …