Noise parameters of the Horizontal Current Bipolar Transistor (HCBT) Technology are
examined for the first time. Impact of technological parameters (ie, three different collector …

The Horizontal Current Bipolar Transistors (HCBT) with different collector designs are
characterized by load-pull measurements at 0.9, 1.8, and 2.4 GHz to find the optimum HCBT …

The high linearity downconversion active mixers are demonstrated in the horizontal current
bipolar transistor (HCBT) technology. The HCBTs fabricated by uniform n-collector doping …

The impact of the HF cleaning step prior to the emitter α-Si deposition on the Horizontal
Current Bipolar Transistor (HCBT) electrical characteristics is analyzed A longer HF dip …

Load-pull and source-pull characterization of packaged Horizontal Current Bipolar
Transistor (HCBT) is performed at 2.4 GHz. A fully-calibrated, automated load-pull …

A performance of very low-cost 180 nm BiCMOS Horizontal Current Bipolar Transistor
(HCBT) technology in wireless communication frequency band is analyzed. A down …

A novel high-voltage single-emitter horizontal current bipolar transistor (HCBT) is presented.
Breakdown voltage improvement compared to high-speed transistor is obtained with full …

This paper summarizes the results of investigations of bipolar transistors made in VESTIC
(Vertical Slit Transistor-based Integrated Circuits) technology. This technology was …

The methodology for the measurement of the knee voltage and maximum collector current
for the linear operation of bipolar transistors is described and demonstrated on the …

The impact of collector region design on large-signal performance of horizontal current
bipolar transistor (HCBT) technology is investigated by calibrated time-domain load-pull …