We explore similarities between the quantum wells and quantum dots used as optical gain
media in semiconductor lasers. We formulate a mapping procedure which allows a simpler …

We report the temperature dependence of the dynamics of optical spin injection from GaAs
barriers into self-assembled quantum dots (QDs) of In 0.5 Ga 0.5 As. Transient circular …

Electric field control of spin polarity in spin injection into InGaAs quantum dots (QDs) from a
tunnel-coupled quantum well (QW) was studied. The degree of freedom of the spin state in …

The suppression of a thermally excited electron-spin relaxation in InGaAs quantum dots
(QDs) using p-doped capping layers toward enhanced room-temperature (RT) spin …

Electric-field-effect spin switching with an enhanced number of highly polarized electron and
photon spins has been demonstrated using p-doped semiconductor quantum dots (QDs) …

Power-dependent time-resolved optical spin orientation measurements were performed on
In 0.1 Ga 0.9 As quantum well (QW) and In 0.5 Ga 0.5 As quantum dot (QD) tunnel-coupled …

This paper shows that negative circular polarization, a spin flip of polarized carriers resulting
in emission of opposite helicity, can be observed in undoped, n-doped, and p-doped …

Exciton g-factors have been measured for a series of single and bilayer InAs/GaAs
semiconductor quantum dot (QD) ensembles emitting at wavelengths in the range 1150 …

Quantum optics unites physical optics and the quantum field theory of light. A fundamental
consequence of light-field quantization is the appearance of vacuum fluctuations, or …

This letter presents a technique for the investigation of the fine structure and spin properties
of quantum dot (QD) ensembles, allowing measurement of QD parameters previously …