Recent progress of amorphous nanomaterials

J Kang, X Yang, Q Hu, Z Cai, LM Liu, L Guo - Chemical Reviews, 2023 - ACS Publications
Amorphous materials are metastable solids with only short-range order at the atomic scale,
which results from local intermolecular chemical bonding. The lack of long-range order …

Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices

J Shi, J Zhang, L Yang, M Qu, DC Qi… - Advanced …, 2021 - Wiley Online Library
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnOx and n-InGaZnO

DH Lee, H Park, M Clevenger, H Kim… - … Applied Materials & …, 2021 - ACS Publications
The fabrication of oxide-based p–n heterojunctions that exhibit high rectification
performance has been difficult to realize using standard manufacturing techniques that …

Recent progress in transistor‐based optoelectronic synapses: from neuromorphic computing to artificial sensory system

SW Cho, SM Kwon, YH Kim… - Advanced Intelligent …, 2021 - Wiley Online Library
Neuromorphic electronics draw attention as innovative approaches that facilitate hardware
implementation of next‐generation artificial intelligent system including neuromorphic in …

Thin-film transistors for large-area electronics

D Geng, K Wang, L Li, K Myny, A Nathan, J Jang… - Nature …, 2023 - nature.com
Thin-film transistors (TFTs) are a key technology in large-area electronics and can be
manufactured uniformly over large areas—on glass or flexible substrates—at lower …

Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities

W Li, J Shi, KHL Zhang, JL MacManus-Driscoll - Materials Horizons, 2020 - pubs.rsc.org
Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics
and energy-related technologies, on the basis of their intriguing properties including …

Amorphous InGaZnO (a-IGZO) synaptic transistor for neuromorphic computing

Y Jang, J Park, J Kang, SY Lee - ACS Applied Electronic Materials, 2022 - ACS Publications
Brain-inspired neuromorphic computing emulates the biological functions of the human
brain to achieve highly intensive data processing with low power consumption. In particular …

Emergent solution based IGZO memristor towards neuromorphic applications

RA Martins, E Carlos, J Deuermeier… - Journal of Materials …, 2022 - pubs.rsc.org
Solution-based memristors are emergent devices, due to their potential in electrical
performance for neuromorphic computing combined with simple and cheap fabrication …

High-performance thin-film transistor with atomic layer deposition (ALD)-derived indium–gallium oxide channel for back-end-of-line compatible transistor applications …

JS Hur, MJ Kim, SH Yoon, H Choi… - … Applied Materials & …, 2022 - ACS Publications
In this paper, the feasibility of an indium–gallium oxide (In2 (1-x) Ga2 x O y) film through
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …

Unlocking neuromorphic vision: Advancements in IGZO-based optoelectronic memristors with visible range sensitivity

ME Pereira, J Deuermeier, R Martins… - ACS Applied …, 2024 - ACS Publications
Optoelectronic memristors based on amorphous oxide semiconductors (AOSs) are
promising devices for the development of spiking neural network (SNN) hardware in …