Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to
electronics, energy, and biological sensing. The structural quality of NWs is of paramount …

GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the
zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that …

Crystalline semiconductors may exist in different polytypic phases with significantly different
electronic and optical properties. In this paper, we calculate the electronic structure and …

Advances in the fabrication and characterization of nanowires polytypes have made crystal
phase engineering a well-established tool to tailor material properties. In this review, recent …

In this work, we report an optical method for characterizing crystal phases along single-
semiconductor III–V nanowires based on the measurement of polarization-dependent …

We investigate the emission properties of excitons in GaAs nanowires containing quantum
disks formed by structural alternation between the zinc-blende and wurtzite phases, by …

In this work, we demonstrate the growth of vertically oriented GaAs nanowires (NWs) and
microplatelets directly on a patterned SiO2/Si (111) substrate by hydride vapor-phase …

Self-catalyzed GaAs nanowire growth was obtained by molecular beam epitaxy on GaAs
(001) substrates after predeposition of subnanometer-thick Si layers. Two substrate …

Nanostructured films offer the ability of modifying surface properties, even more, when they
can generate layers with controlled porosity. The lower implicit integrity of these (multi) …