Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio
frequency (RF) and microwave power amplifier design, including well-known historical and …

With the growth of mobile data applications, the spectrum allocation is becoming very
scarce. To ease congestion and boost speeds, cognitive radio (CR) is currently seen as a …

This paper presents the development of the wideband power amplifier (PA) for application to
intelligent cognitive radios. The load-tracking based on the frequency-varied load-pull …

A highly accurate method of building a large-signal modeling approach considering
dispersive effect of field-effect transistors is presented in this paper. The non-quasi-static …

In this paper, a 1 MHz to 3.4 GHz, 5 W, highly linear power amplifier based on GaN HEMT is
reported. Load-pull technique has been applied to introduce a compromising solution for the …

In this paper a new high breakdown voltage (VBR) double-recessed 4H-SiC MESFET with
metal plate (DRMP-MESFET) structure for reliable high power and RF applications is …

In this paper, a 0.35–8 GHz, 5 W, linear power amplifier based on GaN HEMT die is
reported. Load pull characterization was used to optimize the power performance in the …

Two-dimensional small-signal ac and transient analysis of surface trap effects in 4H-SiC
MESFETs have been performed in this paper. The mechanism by which acceptor-type traps …

A new structure of 4H-SiC MESFETs based on the source field plate technology is proposed
in this paper. The source field plate has been applied not only to improve the breakdown …

Abstract A three-dimensional (3D) electro-thermal analytical model to accurately predict the
temperature distribution in multi-finger silicon carbide (SiC) based high-power field-effect …