Since the first development of large‐area graphene synthesis by the chemical vapor
deposition (CVD) method in 2009, CVD‐graphene has been considered to be a key material …

CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …

In this paper, we have successfully demonstrated high quality Extremely-thin body (ETB) Ge-
on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Furthermore, the …

As transistors continue to shrink, the need to replace silicon with materials of higher carrier
mobilities becomes imperative. Group‐IV semiconductors, and particularly GeSn alloys …

Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of
direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has …

The impact of surface orientations on electrical characteristics of Ge pand n-channel
MOSFETs with ultrathin equivalent oxide thickness Al 2 O 3/GeOx/Ge gate-stacks is …

Recently demonstrated CMOS circuits based on Ge nanowires (Ge-FET) promise sustained
technology scaling because higher mobility Ge guarantees target I ON at a lower V DD …

The impact of postdeposition annealing (PDA) ambient on electrical properties of thin
equivalent oxide thickness (EOT) Al 2 O 3/GeO x/Ge gate-stacks is investigated. It is found …

The effects of oxynitridation and wet oxidation at the interface of SiO 2/4H-SiC (0001) and
$(000\bar {1}) $ were investigated using both electrical and physical characterization …