The chemical physics of sequential infiltration synthesis—A thermodynamic and kinetic perspective
Sequential infiltration synthesis (SIS) is an emerging materials growth method by which
inorganic metal oxides are nucleated and grown within the free volume of polymers in …
inorganic metal oxides are nucleated and grown within the free volume of polymers in …
[HTML][HTML] Al 2 O 3 growth in PMMA thin films by sequential infiltration synthesis: in situ thickness evolution and mass uptake investigation
Sequential infiltration synthesis (SIS) represents a simple and straightforward approach to
grow inorganic materials in polymeric films. In this work a combination of in situ and ex situ …
grow inorganic materials in polymeric films. In this work a combination of in situ and ex situ …
[PDF][PDF] 亚十纳米导向自组装与深紫外混合光刻技术
李自力， 胡晓华， 熊诗圣 - Laser & Optoelectronics Progress, 2022 - researching.cn
摘要光刻图形化工艺对芯片制造乃至于现代信息技术的发展起着至关重要的作用.
随着微电子器件关键尺寸的持续微缩, 芯片制造工艺日益演进, 迫切需要立足国内产业现状 …
随着微电子器件关键尺寸的持续微缩, 芯片制造工艺日益演进, 迫切需要立足国内产业现状 …
Depth profiles of aluminum component in sequential infiltration synthesis-treated electron beam resist films analyzed by time-of-flight secondary ion mass spectrometry
S Ito, Y Ozaki, T Nakamura… - Japanese Journal of …, 2020 - iopscience.iop.org
Sequential infiltration synthesis (SIS) is a promising method for organic–inorganic
hybridization of organic polymer resist films in nanolithography. The understanding of the …
hybridization of organic polymer resist films in nanolithography. The understanding of the …
Nondestructive x-ray reflectivity analysis of Al distributions of ultraviolet-cured spin-coated resist films hybridized with trimethylaluminum
K Chiba, M Nakagawa - Journal of Vacuum Science & Technology B, 2022 - pubs.aip.org
Ultraviolet (UV)-cured spin-coated resist films of 100 nm and thinner thicknesses made with
bisphenol A-based dimethacrylate monomers on silicon substrates were hybridized by …
bisphenol A-based dimethacrylate monomers on silicon substrates were hybridized by …
Doi:/(Please Add Manuscript Number) Fabrication and Photolithographic Properties of Teox Inorganic Photoresist for Two-Photon Laser Direct Writing
L Liu, Z Zhao, C Wang, W Jiang, D Yang… - Tixian, Doi:/(Please Add … - papers.ssrn.com
Inorganic phase change photoresists like TeOx, with their atomic-scale component units and
narrow transition regions, offer superior properties compared to organic polymer …
narrow transition regions, offer superior properties compared to organic polymer …
Sequential infiltration synthesis extreme ultraviolet single expose patterning
A method includes depositing a resist layer onto a hard mask layer to form a multi-layer
patterning material film stack on a semiconductor substrate, directing patterning radiation …
patterning material film stack on a semiconductor substrate, directing patterning radiation …