Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronics applications: A comprehensive review
In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range
Abstract Au/Ti/HfO 2/n-GaAs MIS (metal/insulating layer/semiconductor) diodes were
fabricated by atomic layer deposition technique and their electrical properties were …
fabricated by atomic layer deposition technique and their electrical properties were …
Barrier height modification in Au/Ti/n-GaAs devices with a interfacial layer formed by atomic layer deposition
A Karabulut - Bulletin of Materials Science, 2019 - Springer
X-ray photoelectron spectroscopy has been carried out to characterize the surface of the
hafnia (HfO _ 2)(HfO 2) thin films grown on n-GaAs wafer by atomic layer deposition, and the …
hafnia (HfO _ 2)(HfO 2) thin films grown on n-GaAs wafer by atomic layer deposition, and the …
Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures
A Turut, A Karabulut, H Efeoǧlu - Journal of Materials Science: Materials in …, 2021 - Springer
Abstract We prepared the Au/Ti/Al2O3/n-GaAs MIS (metal/insulating/semiconductor)
structures with and without Al2O3 interfacial layer. The diode D1 has the interfacial layer …
structures with and without Al2O3 interfacial layer. The diode D1 has the interfacial layer …
Exploring the Impact of Fe-Implantation on the Electrical Characteristics of Al/p-Si Schottky Barrier Diodes
JO Bodunrin, DA Oeba, SJ Moloi - Electronic Materials, 2023 - mdpi.com
The effects of Fe-implantation on the electrical characteristics of Au/p-Si Schottky barrier
diodes (SBDs) were studied using current–voltage (I–V) and capacitance–voltage (C–V) …
diodes (SBDs) were studied using current–voltage (I–V) and capacitance–voltage (C–V) …
The current and capacitance characteristics as a function of sample temperature in YMn0. 90Os0. 10O3/p-Si structures
The IV and CV measurements have been performed on the Al/YMn 0.90 Os 0.10 O 3
(YMOO)/p-Si/Al metal/ferroelectric material/semiconductor (MFES) structure at temperatures …
(YMOO)/p-Si/Al metal/ferroelectric material/semiconductor (MFES) structure at temperatures …