Efficiency droop, ie the loss of efficiency at high operating current, afflicts nitride‐based light‐
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …

The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …

We report on the unambiguous detection of Auger electrons by electron emission
spectroscopy from a cesiated InGaN/GaN light-emitting diode under electrical injection …

Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes
and remedies proposed for droop mitigation are classified and reviewed. Droop …

We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=
A n+ B n 2+ C n 3+ f (n)⁠, where f (n) represents carrier leakage out of the active region. The …

The photometric, electrical, and thermal features of LED systems are highly dependent on
one another. By considering all these factors together, it is possible to optimize the design of …

The advantages of blue InGaN light-emitting diodes (LEDs) with InGaN barriers are studied.
The LI curves, carrier concentrations in the quantum wells, energy band diagrams, and …

Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …

Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …

The effect of the asymmetry in carrier concentration and mobility is studied in GaInN pn-
junction light-emitting diodes (LEDs). We propose and present experimental evidence that …