A Novel LG=40 nm AlN-GDC-HEMT on SiC Wafer with fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers
In this work, we report the RF/DC performance of novel AlN/GaN/Graded-AlGaN/GaN double-
channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the …
channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the …
Analysis of Novel Core-Shell Junctionless Nanosheet FET for CMOS Applications
VB Sreenivasulu, M Prasad, E Deepthi… - IEEE …, 2024 - ieeexplore.ieee.org
A Rectangular core-shell (RCS) is analyzed on vertically stacked gate oxide junctionless
nanosheet along with doping and gate/dielectric engineering. This paper also proposes an …
nanosheet along with doping and gate/dielectric engineering. This paper also proposes an …
[HTML][HTML] A fully-differential improved recycling folded-cascode amplifier for fast-settling switched-capacitor applications
M Yavari, M Mohtashamnia - Engineering Science and Technology, an …, 2024 - Elsevier
In this paper, a fully-differential class A single-stage CMOS operational transconductance
amplifier (OTA) is presented for high-speed switched-capacitor (SC) applications. The main …
amplifier (OTA) is presented for high-speed switched-capacitor (SC) applications. The main …
Spacer engineering on multi-channel FinFET for advanced wireless applications
Wireless applications require a low power technology that enables DC/analog/RF functions
on the same chip. It is well established fact that Multi-channel FinFET (Multifin) enhances the …
on the same chip. It is well established fact that Multi-channel FinFET (Multifin) enhances the …
[HTML][HTML] AESware: Developing AES-enabled low-power multicore processors leveraging open RISC-V cores with a shared lightweight AES accelerator
As open-source RISC-V cores continue to be released, the development of low-power
multicore processors utilizing these cores is invigorating the edge/IoT device market …
multicore processors utilizing these cores is invigorating the edge/IoT device market …
Highly sensitive investigation of sirolimus by development of an ion-sensitive field effect transistor based on NH2-MIL-53 (Fe)
Sirolimus (Sir) is widely used in organ transplant patients because it inhibits the mechanistic
target of rapamycin (mTOR) activity and suppresses the immune system. In addition, Sir …
target of rapamycin (mTOR) activity and suppresses the immune system. In addition, Sir …
[HTML][HTML] Analysis of Thermal Effects According to Channel and Drain Contact Metal Distance
Unlike conventional planar metal-oxide-semiconductor field-effect transistors (MOSFET),
multi-gate devices such as fin field-effect transistors (FinFET) suffer from serious electrical …
multi-gate devices such as fin field-effect transistors (FinFET) suffer from serious electrical …
Performance Improvement of Spacer-engineered N-type Tree Shaped NSFET towards Advanced Technology nodes
Tree-shaped Nanosheet FETS (NSFET) is the most dependable way to scale down the gate
lengths deep. This paper investigates the 12nm gate length (LG) n-type Tree-shaped NSFET …
lengths deep. This paper investigates the 12nm gate length (LG) n-type Tree-shaped NSFET …
Numerical simulation of core shell dual metal gate stack junctionless accumulation mode nanowire FET (CS-DM-GS-JAMNWFET) for low power digital applications
S Rewari, N Pandey - Micro and Nanostructures, 2024 - Elsevier
Abstract In this paper, Core Shell Dual Metal Gate Stack Junctionless Accumulation Mode
Nanowire FET (CS-DM-GS-JAMNWFET) is proposed, which has enhanced performance …
Nanowire FET (CS-DM-GS-JAMNWFET) is proposed, which has enhanced performance …
Spacer Dielectric Analysis of Multi-Channel Nanosheet FET for Nanoscale Applications
AK Panigrahy, VVS Amudalapalli, DS Rani… - IEEE …, 2024 - ieeexplore.ieee.org
This work investigates the effect of single and dual-k spacer materials consisting of different
dielectric constants (k) in optimized nano-channel gate-stack nanosheet (NS-FET) …
dielectric constants (k) in optimized nano-channel gate-stack nanosheet (NS-FET) …