Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Output capacitance loss of GaN HEMTs in steady-state switching
The output capacitance () loss, a loss produced when the device's output capacitor is
charged and discharged, has become a concern for GaN high electron mobility transistors …
charged and discharged, has become a concern for GaN high electron mobility transistors …
Trap-state mapping to model GaN transistors dynamic performance
Trapping phenomena degrade the dynamic performance of wide-bandgap transistors.
However, the identification of the related traps is challenging, especially in presence of non …
However, the identification of the related traps is challenging, especially in presence of non …
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
Charge Trapping in GaN Power Transistors: Challenges and Perspectives
M Meneghini, N Modolo, A Nardo… - 2021 IEEE BiCMOS …, 2021 - ieeexplore.ieee.org
Over the past decade, gallium nitride has emerged as an excellent semiconductor for the
fabrication of power devices, to be used in energy conversion systems and switching-mode …
fabrication of power devices, to be used in energy conversion systems and switching-mode …
Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations
To our knowledge, this is the first study to investigate the high-frequency (100–300 kHz)
switching stability of SiC power devices at a Vds of 800 V during hard switching (HSW) and …
switching stability of SiC power devices at a Vds of 800 V during hard switching (HSW) and …
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain
S Li, K Sheng, S Yang - IEEE Transactions on Electron Devices, 2023 - ieeexplore.ieee.org
In this article, the temperature-dependent dynamic ON-resistance () behaviors of GaN
enhancement-mode (E-mode) high-electron-mobility transistors (E-HEMTs) with and without …
enhancement-mode (E-mode) high-electron-mobility transistors (E-HEMTs) with and without …
Compact modeling of nonideal trapping/detrapping processes in GaN power devices
N Modolo, C De Santi, G Baratella… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Compact modeling of charge trapping processes in GaN transistors is of fundamental
importance for advanced circuit design. The goal of this article is to propose a methodology …
importance for advanced circuit design. The goal of this article is to propose a methodology …
Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si
In this work, with the help of detailed experimentation and well-calibrated computations, we
probe into the physical mechanism governing temperature dependence of the hot electron …
probe into the physical mechanism governing temperature dependence of the hot electron …
[HTML][HTML] Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs
In this paper, a new method for evaluating hot-electron degradation in p-GaN gate
AlGaN/GaN power HEMTs is proposed. The method exploits a commercial parameter …
AlGaN/GaN power HEMTs is proposed. The method exploits a commercial parameter …