Preparation of hierarchical MOF-5 films using morphology controlled ZnO coatings for temperature dependent optical sensors application
Morphology and well-organized hierarchical structures are so effective on the properties of
materials and their device applications. Herein, the metal organic framework (MOF-5) has …
materials and their device applications. Herein, the metal organic framework (MOF-5) has …
Structural, optical and photoelectric properties of Tb doped ZnO thin films for device applications
V Malyutina-Bronskaya, V Zalesski, D Zhyhulin… - Optical Materials, 2022 - Elsevier
In this work we have investigated the effect of thermal annealing of thin ZnO: Tb3+ films
obtained by the combined method of electrochemical deposition of Tb ions onto silicon …
obtained by the combined method of electrochemical deposition of Tb ions onto silicon …
(0001) n-ZnO/(0001) p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel
We investigate the prospects of n-type (0001) n-ZnO/(0001) p-GaN heterostructures as
ultraviolet photodetectors. The performance of these devices with different acceptor …
ultraviolet photodetectors. The performance of these devices with different acceptor …
High sensitivity X-ray detector based on a 25 µm-thick ZnO film
X Zhao, D Huang, G Li, Y He, W Peng, G Li - Sensors and Actuators A …, 2022 - Elsevier
In the field of direct-conversion flat panel X-ray detector, semiconductor with thickness of
tens to hundreds microns is needed. In this paper, we demonstrate that thick ZnO …
tens to hundreds microns is needed. In this paper, we demonstrate that thick ZnO …
IR photodetector capabilities of p-NiO/n-ZnO heterojunction structure
ABU Rahman, S Begum, NMS Kaawash… - Materials Today …, 2023 - Elsevier
A p-NiO/n-ZnO bilayer thin film device was deposited by a simple, low temperature spray
pyrolysis technique on the glass substrate at 250 O C. The deposited thin films are …
pyrolysis technique on the glass substrate at 250 O C. The deposited thin films are …
Distributed semiconductor heterojunctions of ZnO–Cu2O for ultraviolet photodetection
Semiconductor heterojunctions, because of their unique optoelectronic properties, have
gained significant attention for integrated photonic devices. UV photodetectors based on …
gained significant attention for integrated photonic devices. UV photodetectors based on …
Preparation of n-ZnO/p-Si heterojunction photodetector via rapid thermal oxidation technique: effect of oxidation time
RA Ismail, AME Al-Samarai, WM Mohammed - Applied Physics A, 2018 - Springer
Abstract Isotype n-ZnO/p-Si heterojunction photodetectors were prepared by thermally
deposited zinc film on the single-crystalline silicon substrate followed by rapid thermal …
deposited zinc film on the single-crystalline silicon substrate followed by rapid thermal …
Photosensitivity of ZnOx:MgOx Nanocomposite Sol-Gel Films on the Surface of Silicon Depending on Temperature
A Semchenko, V Malyutina-Bronskaya… - … Conference on Global …, 2023 - Springer
The photoelectric characteristics of sol-gel ZnOx: MgOx layers on an n-Si substrate,
measured in the temperature range from 5 to 50° C, has been analyzed. For photodetector …
measured in the temperature range from 5 to 50° C, has been analyzed. For photodetector …
Check for updates Reflectance of Black Silicon with Sol-Gel ZnO Passivation Films: Optical Simulation and Experimental Correlation
A Semchenko¹, D Kovalenko, G Ayvazyan… - Recent Advances in … - books.google.com
The results of a study of the optical properties of a black silicon (BS) layer passivated with
ZnO films obtained by the sol-gel technique are presented. The BS layer was formed by the …
ZnO films obtained by the sol-gel technique are presented. The BS layer was formed by the …