Ferroelectric field-effect transistors (FeFETs) have become an attractive technology for
memory and emerging applications on a silicon electronic platform after the discovery of the …

The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …

We investigate the impact of saturated spontaneous polarization (of the ferroelectric on
endurance fatigue of Si FeFET with Metal/Ferroelectric/Interlayer/Si (MFIS) gate structure …

In this work, we investigate the device-to-device variations in the remanent polarization of
metal–ferroelectric–insulator–metal stacks based on ferroelectric hafnium–zirconium–oxide …

We study the disturb characteristics of ferroelectric field-effect transistors (FEFETs) with band-
engineered gate stacks. We demonstrate that integrating a dielectric Al2O3 layer within the …

The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition
of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up …

The progress of biologically inspired neuromorphic computing hardware in the last decade
has been fostered also by the advancement in CMOS-compatible memristors, providing a …

FeFET technology offers the potential for fast, energy-efficient, low-cost, and high-capacity
non-volatile memory and neuromorphic devices. However, charge trapping significantly …

The HfxZr1− xO2 (HZO) based ferroelectric field-effect transistors (FeFETs) with oxide
semiconductor channel have been proposed to have the potential of interface layer (IL) free …

P-type ferroelectric field-effect transistors (p-FEFETs) are of significant interest due to recent
reports on their immediate read-after-write capability (unlike their n-type counterparts), which …