RF compressibility of topological surface and interface states in metal–hBN–Bi2Se3 capacitors
A Inhofer, T Wilde, J Duffy, M Boukhicha… - Journal of Physics …, 2019 - iopscience.iop.org
The topological state that emerges at the surface of a topological insulator (TI) and at the TI-
substrate interface are studied in metal–hBN–Bi 2 Se 3 capacitors. By measuring the RF …
substrate interface are studied in metal–hBN–Bi 2 Se 3 capacitors. By measuring the RF …
Dirac fermion optics and plasmonics in graphene microwave devices
H Graef - 2019 - theses.hal.science
This thesis addresses three different phenomena in the DC and GHz electronic transport
properties of ballistic, hBN-encapsulated graphene: Firstly, the total internal reflection of …
properties of ballistic, hBN-encapsulated graphene: Firstly, the total internal reflection of …