Graphene emerged in 2004 as the first 2-D material with exotic properties. Since then the
literature has been flooded with reports, with physicists, material scientists, and engineers …

In this paper, a drain current model incorporating drain-induced barrier lowering (DIBL) has
been developed for Dual Material gate Cylindrical/Surrounding gate MOSFET (DMG …

In this paper, we have proposed and simulated a new 10-nm Dual-Material Surrounded
Gate MOSFETs (DMSG) MOSFETs for nanoscale digital circuit applications. The …

A quasi-analytical model bas been developed for predicting the current–voltage
characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect …

Based on McKelvey's flux theory, a carrier transport model for a graphene field-effect
transistor (GFET) is addressed. This model leads to an explicit expression for drain-to …

It is expected that the next device structure evolution will be the Silicon-on-Nothing (SON)
Gate-All-Around (GAA) nanowire structure. In principle, the nanowire transistor should have …

In this work, we investigate analytically quantum mechanical (QM) effects on the threshold
voltage (VTH) shift of the surrounding-gate (SG) metal-oxide-semiconductor field-effect …

We propose an improved analytical Drain current modeling for nano scaled surrounding
gate MOSFETs. The proposed device structure is scaled in nanometer. The Surround Gate …

A carrier transport model for graphene nanoribbon field-effect transistors (GNR FETs) is
obtained using McKelvey's flux and quasi-ballistic transport theories. Source/drain series …

The book is about the fundamental and research-based outcome of Semiconductor Device
development in Electronics. The continuous shrinking of the physical size of devices is the …