A review on piezo-/ferro-electric properties of morphologically diverse ZnO nanostructures
The observation of feeble ferroelectricity and giant piezoelectricity in doped II–VI ZnO binary
semiconductor has inspired a great deal of research interest, which could pave the way to …
semiconductor has inspired a great deal of research interest, which could pave the way to …
Controlled growth of high‐quality ZnO‐based films and fabrication of visible‐blind and solar‐blind ultra‐violet detectors
ZnO is a wide‐bandgap (3.37 eV at room temperature) oxide semiconductor that is attractive
for its great potential in short‐wavelength optoelectronic devices, in which high quality films …
for its great potential in short‐wavelength optoelectronic devices, in which high quality films …
Two-dimensional electron gas in Zn polar ZnMgO∕ ZnO heterostructures grown by radical source molecular beam epitaxy
H Tampo, H Shibata, K Matsubara, A Yamada… - Applied physics …, 2006 - pubs.aip.org
A two-dimensional electron gas was observed in Zn polar Zn Mg O∕ Zn O (ZnMgO on ZnO)
heterostructures grown by radical source molecular beam epitaxy. The electron mobility of …
heterostructures grown by radical source molecular beam epitaxy. The electron mobility of …
ZnO metal–semiconductor–metal ultraviolet sensors with various contact electrodes
ZnO epitaxial films were grown on sapphire (0001) substrates by using RF plasma-assisted
molecular beam epitaxy. Metal–semiconductor–metal (MSM) sensors with Ag, Pd and Ni …
molecular beam epitaxy. Metal–semiconductor–metal (MSM) sensors with Ag, Pd and Ni …
Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire
G Perillat-Merceroz, R Thierry, PH Jouneau… - …, 2012 - iopscience.iop.org
Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of
nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting …
nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting …
Determination of crystallographic polarity of ZnO layers
The crystallographic polarity of ZnO epilayers was determined by x-ray diffraction (XRD)
using anomalous dispersion near the Zn K edge. The method is not destructive and is …
using anomalous dispersion near the Zn K edge. The method is not destructive and is …
ZnO-based MIS photodetectors
We report the fabrication of ZnO-based metal–insulator–semiconductor (MIS) and metal–
semiconductor–metal (MSM) photodetectors. With 5V applied bias, it was found that …
semiconductor–metal (MSM) photodetectors. With 5V applied bias, it was found that …
Solar-blind 4.55 eV band gap Mg0. 55Zn0. 45O components fabricated using quasi-homo buffers
A route for synthesizing high Mg content single-phase wurtzite MgZnO films having band
gaps in the solar-blind region is demonstrated by employing molecular beam epitaxy on …
gaps in the solar-blind region is demonstrated by employing molecular beam epitaxy on …
Controlled growth of Zn-polar ZnO epitaxial film by nitridation of sapphire substrate
Surface nitridation is used to eliminate O-polar inversion domains and control the growth of
single-domain Zn-polar ZnO film on sapphire (0001) substrate by rf-plasma-assisted …
single-domain Zn-polar ZnO film on sapphire (0001) substrate by rf-plasma-assisted …
Structural characterization and surface polarity determination of polar ZnO films prepared by MBE
Q Li, M Ying, M Zhang, W Cheng, W Li, B Liao… - Applied …, 2021 - Springer
O-polar and Zn-polar ZnO films were grown by molecular beam epitaxy (MBE) on sapphire
substrates. The growth process was in-situ monitored by reflection high-energy electron …
substrates. The growth process was in-situ monitored by reflection high-energy electron …